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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT110N06MMOSFET N-CH 60V 45A 52W TO-263 Goford Semiconductor |
784 | - |
|
数据表 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | Surface Mount | 2.4V @ 250µA | 31 nC @ 10 V | 60 V | ±20V | 1200 pF @ 30 V | - | - | TO-263 | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
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|
G230P06MMOSFET P-CH 60V 48A 105W TO-263 Goford Semiconductor |
745 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 48A (Tc) | 10V | 20mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 62 nC @ 10 V | 60 V | ±20V | 4505 pF @ 30 V | - | - | TO-263 | - | 105W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT042P06MMOSFET P-CH 60V 160A 280W 4.5M(M Goford Semiconductor |
2,197 | - |
|
数据表 |
SGT | - | Active | P-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 4.5mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 305 nC @ 10 V | 60 V | 20V | 9389 pF @ 30 V | - | - | - | - | 280W (Tc) | -55°C ~ 150°C (TJ) | |
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|
G230P06KP-CH,-60V,-60A,RD(MAX)<20M@-10V, Goford Semiconductor |
1,697 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 20mOhm @ -10A,- 10V | Surface Mount | 4V @ 250µA | 62 nC @ 10 V | 60 V | ±20V | 4581 pF @ 30 V | - | - | TO-252 | - | 115W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT090N06KMOSFET, N-CH, 60V,45A,TO-252 Goford Semiconductor |
1,583 | - |
|
数据表 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | Surface Mount | 2.4V @ 250µA | 22 nC @ 10 V | 60 V | ±20V | 1088 pF @ 30 V | - | - | TO-252 | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT110N06D5N60V, 45A,RD<11M@10V,VTH1.0V~2.4 Goford Semiconductor |
9,976 | - |
|
数据表 |
GT | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 4.5V, 10V | 11mOhm @ 14A, 10V | Surface Mount | 2.4V @ 250µA | 31 nC @ 10 V | 60 V | ±20V | 1202 pF @ 30 V | - | - | 8-DFN (4.9x5.75) | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
GT650N15KN150V,RD(MAX)<65M@10V,VTH2.5V~4. Goford Semiconductor |
1,927 | - |
|
数据表 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 65mOhm @ 10A, 10V | Surface Mount | 4.5V @ 250µA | 12 nC @ 10 V | 150 V | ±20V | 600 pF @ 75 V | - | - | TO-252 | - | 68W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G300P06TMOSFET, P-CH, 60V,40A,TO-220 Goford Semiconductor |
150 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 10V | 30mOhm @ 12A, 10V | Through Hole | 3V @ 250µA | 49 nC @ 10 V | 60 V | ±20V | 2736 pF @ 30 V | - | - | TO-220 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
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|
G050P03D5MOSFET P-CH 30V 85A 100W 4M(MAX) Goford Semiconductor |
5,000 | - |
|
数据表 |
Trench | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 85A (Tc) | 10V, 4.5V | 4mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 111 nC @ 10 V | 30 V | 20V | 7670 pF @ 15 V | - | - | 8-DFN (4.9x5.75) | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
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|
25P06P60V,RD(MAX)<45M@-10V,VTH2V~3V T Goford Semiconductor |
3,714 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 32mOhm @ 12A, 10V | Surface Mount | 3V @ 250µA | 37 nC @ 10 V | 60 V | ±20V | 2527 pF @ 30 V | - | - | TO-252 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
