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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT019N04D5N40V,120A,RD<2.8M@10V,VTH1.0V~2. Goford Semiconductor |
4,610 | - |
|
数据表 |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 2.8mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 95 nC @ 10 V | 40 V | ±20V | 2840 pF @ 20 V | - | - | 8-DFN (4.9x5.75) | - | 63W (Tc) | -55°C ~ 150°C (TJ) |
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GT55N06D5N60V,RD(MAX)<8M@10V,RD(MAX)<13M@ Goford Semiconductor |
4,521 | - |
|
数据表 |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | Surface Mount | 2.4V @ 250µA | 31 nC @ 10 V | 60 V | ±20V | 1085 pF @ 30 V | - | - | 8-DFN (4.9x5.75) | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
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G230P06SP-60V,-8A,RD(MAX)<23M@-10V,VTH-2 Goford Semiconductor |
3,920 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 23mOhm @ 5A, 10V | Surface Mount | 4V @ 250µA | 62 nC @ 10 V | 60 V | ±20V | 4784 pF @ 30 V | - | - | 8-SOP | - | 3W (Tc) | -55°C ~ 150°C (TJ) |
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G60N10KN90V,60A,RD<25M@10V,VTH0.8V~2.5V Goford Semiconductor |
2,500 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 146 nC @ 10 V | 100 V | ±20V | 5944 pF @ 50 V | - | - | TO-252 | - | 105W (Tc) | -55°C ~ 150°C (TJ) |
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GT750P08KMOSFET P-CH 80V 28A TO-252 Goford Semiconductor |
2,500 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 28A (Tc) | 4.5V, 10V | 70mOhm @ 5A, 10V | Surface Mount | 3V @ 250µA | 36 nC @ 10 V | - | ±20V | 1981 pF @ 40 V | - | - | TO-252 | - | - | -55°C ~ 150°C (TJ) |
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G70P04KMOSFET P-CH 40V 70A 88W 10M(MAX) Goford Semiconductor |
2,500 | - |
|
数据表 |
Trench | - | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V, 4.5V | 10mOhm @ 21A, 10V | Surface Mount | 2.5V @ 250µA | 42 nC @ 10 V | 40 V | 20V | 4714 pF @ 20 V | - | - | - | - | 88W (Tc) | -55°C ~ 150°C (TJ) |
|
630AN200V,RD(MAX)<280M@10V,VTH1V~3V, Goford Semiconductor |
2,340 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 250mOhm @ 4.5A, 10V | Surface Mount | 2V @ 250µA | 12 nC @ 10 V | 200 V | ±20V | 510 pF @ 25 V | - | - | TO-252 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
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G230P06D5MOSFET P-CH 60V 48A DFN5*6-8L Goford Semiconductor |
4,890 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 48A (Tc) | 10V | 20mOhm @ -10A,- 10V | Surface Mount | 4V @ 250µA | 62 nC @ 10 V | 60 V | ±20V | 5002 pF @ 30 V | - | - | 8-DFN (4.9x5.75) | - | 105W (Tc) | -55°C ~ 150°C (TJ) |
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G70P02KP15V,RD(MAX)<[email protected],RD(MAX)< Goford Semiconductor |
2,893 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 2.5V, 4.5V | 10mOhm @ 20A, 4.5V | Surface Mount | 1.5V @ 250µA | 110 nC @ 4.5 V | 15 V | ±12V | 5869 pF @ 7.5 V | - | - | TO-252 | - | 70W (Tc) | -55°C ~ 150°C (TJ) |
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G80N03KN30V, 80A,RD<6.5M@10V,VTH1.0V~2. Goford Semiconductor |
2,460 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 4mOhm @ 25A, 10V | Surface Mount | 2V @ 250µA | 36 nC @ 10 V | 30 V | ±20V | 1673 pF @ 15 V | - | - | TO-252 | - | 53.4W (Tc) | -55°C ~ 150°C (TJ) |
