Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 21

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G60N04K N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor	4,867	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	7mOhm @ 30A, 10V	Surface Mount	2.5V @ 250µA	29 nC @ 10 V	40 V	±20V	2014 pF @ 20 V	-	-	TO-252	-	65W (Tc)	-55°C ~ 150°C (TJ)
60N06 N60V,RD(MAX)<17M@10V,RD(MAX)<21M Goford Semiconductor	2,480	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	17mOhm @ 5A, 10V	Surface Mount	2V @ 250µA	50 nC @ 10 V	60 V	±20V	2315 pF @ 30 V	-	-	TO-252	-	69W (Tc)	-55°C ~ 150°C (TJ)
G26P04K P-40V,RD(MAX)<18M@-10V,RD(MAX)<2 Goford Semiconductor	2,245	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	26A (Tc)	4.5V, 10V	18mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	42 nC @ 10 V	40 V	±20V	2849 pF @ 20 V	-	-	TO-252	-	50W (Tc)	-55°C ~ 150°C (TJ)
18N10 N100V,RD(MAX)<53M@10V,RD(MAX)<63 Goford Semiconductor	1,931	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	53mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	26 nC @ 10 V	100 V	±20V	2161 pF @ 50 V	-	-	TO-252	-	80W (Tc)	-55°C ~ 150°C (TJ)
GT110N06S N60V,RD(MAX)<[email protected],RD(MAX)<1 Goford Semiconductor	3,583	-	询价单	数据表	SGT	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	4.5V, 10V	11mOhm @ 14A, 10V	Surface Mount	2.4V @ 250µA	24 nC @ 10 V	60 V	±20V	1300 pF @ 25 V	-	-	8-SOP	-	3W (Tc)	-55°C ~ 150°C (TJ)
G2K8P15K P-150V,-12A,RD(MAX)<310M@-10V,VT Goford Semiconductor	2,385	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	310mOhm @ 1A, 10V	Surface Mount	3.5V @ 250µA	11 nC @ 10 V	150 V	±20V	953 pF @ 75 V	-	-	TO-252	-	59W (Tc)	-55°C ~ 150°C (TJ)
GT060N04K MOSFET, N-CH, 40V,54A,TO-252 Goford Semiconductor	2,304	-	询价单	数据表	SGT	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	62A (Tc)	4.5V, 10V	5.5mOhm @ 30A, 10V	Surface Mount	2.3V @ 250µA	25 nC @ 10 V	40 V	±20V	1280 pF @ 20 V	-	-	TO-252	-	70W (Tc)	-55°C ~ 150°C (TJ)
18N20J N200V, 18A,RD<0.16@10V,VTH1V~3V, Goford Semiconductor	130	-	询价单	数据表	TrenchFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	160mOhm @ 9A, 10V	Through Hole	3V @ 250µA	17.7 nC @ 10 V	200 V	±30V	836 pF @ 25 V	-	-	TO-251	-	65.8W (Tc)	-55°C ~ 150°C (TJ)
GT700P08T P-80V, -25A,RD<72M@-10V,VTH-2V~- Goford Semiconductor	101	-	询价单	数据表	SGT	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	72mOhm @ 2A, 10V	Through Hole	3.5V @ 250µA	75 nC @ 10 V	80 V	±20V	1639 pF @ 40 V	-	-	TO-220	-	125W (Tc)	-55°C ~ 150°C (TJ)
GT700P08K P-80V,-20A,RD(MAX)<72M@-10V,VTH- Goford Semiconductor	2,477	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	72mOhm @ 2A, 10V	Surface Mount	3.5V @ 250µA	75 nC @ 10 V	60 V	±20V	1615 pF @ 40 V	-	-	TO-252	-	125W (Tc)	-55°C ~ 150°C (TJ)

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