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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G050N03SN30V, 18A,RD<5M@10V,VTH1.1V~2.4V Goford Semiconductor |
4,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 4.5V, 10V | 5mOhm @ 10A, 10V | Surface Mount | 2.4V @ 250µA | 37 nC @ 10 V | 30 V | ±20V | 1714 pF @ 15 V | - | - | 8-SOP | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) |
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G18P03SP-30V,-15A,RD(MAX)<10M@-10V,VTH- Goford Semiconductor |
3,964 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 4.5V, 10V | 10mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 58 nC @ 10 V | 30 V | ±20V | 3570 pF @ 15 V | - | - | 8-SOP | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) |
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G13P04SP-40V,-13A,RD(MAX)<15M@-10V,VTH- Goford Semiconductor |
3,580 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 15mOhm @ 12A, 10V | Surface Mount | 2.5V @ 250µA | 40 nC @ 10 V | 40 V | ±20V | 3271 pF @ 20 V | - | - | 8-SOP | - | 3W (Tc) | -55°C ~ 150°C (TJ) |
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G35P04D5P-40V,-35A,RD(MAX)<[email protected],VTH Goford Semiconductor |
2,497 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 14mOhm @ 15A, 10V | Surface Mount | 2.3V @ 250µA | 60 nC @ 10 V | 40 V | ±20V | 3224 pF @ 20 V | - | - | 8-DFN (4.9x5.75) | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
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G12P10KP100V,RD(MAX)<200M@-10V,RD(MAX)< Goford Semiconductor |
544 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 12A | - | 200mOhm @ 6A, 10V | Surface Mount | 3V @ 250µA | 33 nC @ 10 V | 100 V | ±20V | 1720 pF @ 50 V | - | - | TO-252 (DPAK) | - | 57W | -55°C ~ 150°C (TJ) |
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G20P06KP-60V, -20A,RD<45M@-10V,VTH-2V~- Goford Semiconductor |
213 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 45mOhm @ 12A, 10V | Surface Mount | 3.5V @ 250µA | 46 nC @ 10 V | 60 V | ±20V | 3430 pF @ 30 V | - | - | TO-252 | - | 90W (Tc) | -55°C ~ 150°C (TJ) |
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GT700P08D3P-80V,-16A,RD(MAX)<75M@-10V,VTH- Goford Semiconductor |
4,787 | - |
|
数据表 |
- | 8-PowerVDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 75mOhm @ 2A, 10V | Surface Mount | 3.5V @ 250µA | 75 nC @ 10 V | 80 V | ±20V | 1591 pF @ 40 V | - | - | 8-DFN (3.15x3.05) | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
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G2K8P15SP-150V,-2.2A,RD(MAX)<310M@-10V,V Goford Semiconductor |
3,678 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 2.2A (Tc) | 10V | 310mOhm @ 500mA, 10V | Surface Mount | 3.5V @ 250µA | 11 nC @ 10 V | 150 V | ±20V | 966 pF @ 75 V | - | - | 8-SOP | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
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GT060N04TMOSFET, N-CH, 40V,60A,TO-220 Goford Semiconductor |
126 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 62A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | Through Hole | 2.3V @ 250µA | 25 nC @ 10 V | 40 V | ±20V | 1280 pF @ 20 V | - | - | TO-220 | - | 70W (Tc) | -55°C ~ 150°C (TJ) |
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G300P06D5P-60V,-40A,RD(MAX)<30M@-10V,VTH- Goford Semiconductor |
4,878 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 10V | 30mOhm @ 10A, 10V | Surface Mount | 3V @ 250µA | 49 nC @ 10 V | 60 V | ±20V | 2705 pF @ 30 V | - | - | 8-DFN (4.9x5.75) | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
