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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GT035N10TN100V,190A,RD<3.5M@10V,VTH2.0V~4 Goford Semiconductor |
23 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 190A (Tc) | 10V | 3.5mOhm @ 20A, 10V | Through Hole | 4V @ 250µA | 68 nC @ 10 V | 100 V | ±20V | 6057 pF @ 50 V | - | - | TO-220 | - | 250W (Tc) | -55°C ~ 150°C (TJ) |
|
G08P06D3P60V,RD(MAX)<52M@-10V,VTH-2V~-3. Goford Semiconductor |
2,677 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 52mOhm @ 6A, 10V | Surface Mount | 3.5V @ 250µA | 25 nC @ 10 V | 60 V | ±20V | 3000 pF @ 30 V | - | - | 8-DFN (3.15x3.05) | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G90P04KMOSFET P-CH 40V 90A 150W 220M(MA Goford Semiconductor |
2,500 | - |
|
数据表 |
Trench | - | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 10V | 7.5mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 97 nC @ 10 V | 40 V | 20V | 6331 pF @ 20 V | - | - | - | - | 150W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G58N06KN60V,58A,RD<13M@10V,VTH1.0V~2.5V Goford Semiconductor |
2,319 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | Surface Mount | 2.5V @ 250µA | 36 nC @ 10 V | 60 V | ±20V | 2841 pF @ 30 V | - | - | TO-252 | - | 71W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT130N10D3MOSFET N-CH 100V 52A DFN3*3-8L Goford Semiconductor |
2,970 | - |
|
数据表 |
SGT | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 52A (Tc) | 10V | 12.5mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 18 nC @ 10 V | 100 V | ±20V | 1254 pF @ 50 V | - | - | 8-DFN (3.15x3.05) | - | 71W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT060N04D3N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Goford Semiconductor |
8,415 | - |
|
数据表 |
SGT | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | Surface Mount | 2.5V @ 250µA | 25 nC @ 10 V | 40 V | ±20V | 1280 pF @ 20 V | - | - | 8-DFN (3.15x3.05) | - | 60W (Tc) | -55°C ~ 150°C (TJ) |
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G33N03D52N30V, 33A,RD<13M@10V,VTH1V~3V, D Goford Semiconductor |
4,970 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 4.5V, 10V | 13mOhm @ 16A, 10V | Surface Mount | 3V @ 250µA | 17.5 nC @ 10 V | 30 V | ±20V | 782 pF @ 15 V | - | - | 8-DFN (4.9x5.75) | - | 29W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G30N04D3MOSFET N-CH 40V 30A DFN33-8L Goford Semiconductor |
1,033 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 30 nC @ 10 V | 40 V | ±20V | 1940 pF @ 20 V | - | - | 8-DFN (3.15x3.05) | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT180N12KMOSFET N-CH 120V 70A 100W 10M(M Goford Semiconductor |
2,500 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55A (Tc) | 10V | 17mOhm @ 20A, 10V | Surface Mount | 4.5V @ 250µA | 25 nC @ 10 V | 120 V | ±20V | 1650 pF @ 60 V | - | - | TO-252 | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G45P40TMOSFET, P-CH, 40V,45A,TO-220 Goford Semiconductor |
2,055 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 4.5V, 10V | 16mOhm @ 30A, 10V | Through Hole | 2.5V @ 250µA | 42 nC @ 10 V | 40 V | ±20V | 3269 pF @ 20 V | - | - | TO-220 | - | 80W (Tc) | -55°C ~ 150°C (TJ) |
