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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G50N03D5N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M Goford Semiconductor |
4,998 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | Surface Mount | 2.4V @ 250µA | 38.4 nC @ 10 V | 30 V | ±20V | 1661 pF @ 15 V | - | - | 8-DFN (4.9x5.75) | - | 25.5W (Tc) | -55°C ~ 150°C (TJ) |
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G48N03D3N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4 Goford Semiconductor |
4,925 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | Surface Mount | 2.4V @ 250µA | 38 nC @ 10 V | 30 V | ±20V | 1692 pF @ 15 V | - | - | 8-DFN (3.15x3.05) | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
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G45P02D3P20V,RD(MAX)<[email protected],RD(MAX)< Goford Semiconductor |
4,866 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 2.5V, 4.5V | 7.5mOhm @ 10A, 4.5V | Surface Mount | 1V @ 250µA | 44 nC @ 4.5 V | 20 V | ±12V | 4867 pF @ 10 V | - | - | 8-DFN (3.15x3.05) | - | 29W (Tc) | -55°C ~ 150°C (TJ) |
|
G30N02TMOSFET N-CH 20V 30A TO-220 Goford Semiconductor |
118 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V | 13mOhm @ 20A, 4.5V | Through Hole | 1.2V @ 250µA | 15 nC @ 10 V | 20 V | ±12V | 900 pF @ 10 V | - | - | TO-220 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
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GT060N04D5N40V,120A,RD<2.8M@10V,VTH1.0V~2. Goford Semiconductor |
4,870 | - |
|
数据表 |
- | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 62A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | Surface Mount | 2.3V @ 250µA | 44 nC @ 10 V | 40 V | ±20V | 1276 pF @ 20 V | - | - | 8-DFN (4.9x5.75) | - | 39W (Tc) | -55°C ~ 150°C (TJ) |
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GT130N10KMOSFET N-CH 100V 60A 73.5W TO-2 Goford Semiconductor |
2,444 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 12mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 18 nC @ 10 V | 100 V | ±20V | 1215 pF @ 50 V | - | - | TO-252 | - | 73.5W (Tc) | -55°C ~ 150°C (TJ) |
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G080N06KMOSFET N-CH 60V 80A 110W TO-252 Goford Semiconductor |
2,384 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 8mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 77 nC @ 10 V | 60 V | ±20V | 3408 pF @ 30 V | - | - | TO-252 | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
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GT110N06D3N60V, 35A,RD<11M@10V,VTH1.0V~2.4 Goford Semiconductor |
4,999 | - |
|
数据表 |
SGT | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 11mOhm @ 14A, 10V | Surface Mount | 2.4V @ 250µA | 24 nC @ 10 V | 60 V | ±20V | 1059 pF @ 30 V | - | - | 8-DFN (3.15x3.05) | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
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G40P03D5P-30V,-35A,RD(MAX)<10M@-10V,VTH- Goford Semiconductor |
4,955 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 50 nC @ 10 V | 30 V | ±20V | 2716 pF @ 15 V | - | - | 8-DFN (4.9x5.75) | - | 48W (Tc) | -55°C ~ 150°C (TJ) |
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GT700P08SP-80V,-6.5A,RD(MAX)<72M@-10V,VTH Goford Semiconductor |
3,785 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 72mOhm @ 2A, 10V | Surface Mount | 3.5V @ 250µA | 75 nC @ 10 V | 80 V | ±20V | 1624 pF @ 40 V | - | - | 8-SOP | - | 3W (Tc) | -55°C ~ 150°C (TJ) |
