Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 17

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G6K8P15KE MOSFET P-CH ESD 150V 12A TO-252 Goford Semiconductor	2,308	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	800mOhm @ 6A, 10V	Surface Mount	4V @ 250µA	11 nC @ 10 V	150 V	±20V	1550 pF @ 75 V	-	-	TO-252	-	60W (Tc)	-55°C ~ 150°C (TJ)
GT007N04TL N40V,150A,RD<1.5M@10V,VTH1.0V~2. Goford Semiconductor	2,000	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	4.5V, 10V	1.5mOhm @ 30A, 10V	Surface Mount	2.5V @ 250µA	163 nC @ 10 V	40 V	±20V	7363 pF @ 20 V	-	-	TOLL-8L	-	156W (Tc)	-55°C ~ 150°C (TJ)
G085P02TS P-20V,-8.2A,RD(MAX)<[email protected],V Goford Semiconductor	4,480	-	询价单	数据表	-	8-TSSOP (0.173", 4.40mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	8.2A (Tc)	1.8V, 4.5V	8.5mOhm @ 4.2A, 4.5V	Surface Mount	900mV @ 250µA	29 nC @ 10 V	20 V	±8V	1255 pF @ 10 V	-	-	8-TSSOP	-	1.05W (Tc)	-55°C ~ 150°C (TJ)
G300P06S P-CH,-60V,-12A,RD(MAX)<30M@-10V, Goford Semiconductor	3,391	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	30mOhm @ 8A, 10V	Surface Mount	3V @ 250µA	49 nC @ 10 V	60 V	±20V	2719 pF @ 30 V	-	-	8-SOP	-	3W (Tc)	-55°C ~ 150°C (TJ)
G40P03K P-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Goford Semiconductor	1,375	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	10mOhm @ 15A, 10V	Surface Mount	2.5V @ 250µA	50 nC @ 10 V	30 V	±20V	2622 pF @ 15 V	-	-	TO-252	-	78W (Tc)	-55°C ~ 150°C (TJ)
G130N06S MOSFET, N-CH,60V,9A,RD(MAX)<12M@ Goford Semiconductor	3,990	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	4.5V, 10V	12mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	67 nC @ 10 V	60 V	±20V	3068 pF @ 30 V	-	-	8-SOP	-	2.6W (Tc)	-55°C ~ 150°C (TJ)
G06N06S N60V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor	6,020	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	4.5V, 10V	22mOhm @ 6A, 10V	Surface Mount	2.4V @ 250µA	46 nC @ 10 V	60 V	±20V	2477 pF @ 30 V	-	-	8-SOP	-	2.1W (Tc)	-55°C ~ 150°C (TJ)
G26P04D5 P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Goford Semiconductor	4,995	-	询价单	数据表	TrenchFET®	8-PowerTDFN	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	26A (Tc)	4.5V, 10V	18mOhm @ 12A, 10V	Surface Mount	2.5V @ 250µA	45 nC @ 10 V	40 V	±20V	2479 pF @ 20 V	-	-	8-DFN (4.9x5.75)	-	50W (Tc)	-55°C ~ 150°C (TJ)
G16P03S P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Goford Semiconductor	2,234	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	16A (Tc)	4.5V, 10V	12mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	35 nC @ 10 V	30 V	±20V	2800 pF @ 15 V	-	-	8-SOP	-	3W (Tc)	-55°C ~ 150°C (TJ)
G16P03D3 P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Goford Semiconductor	9,433	-	询价单	数据表	TrenchFET®	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	45A (Tc)	4.5V, 10V	12mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	35 nC @ 10 V	30 V	±20V	2805 pF @ 15 V	-	-	8-DFN (3.15x3.05)	-	55W (Tc)	-55°C ~ 150°C (TJ)

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