Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 16

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G400P06S MOSFET, P-CH, 60V,6A,SOP-8 Goford Semiconductor	2,843	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	40mOhm @ 12A, 10V	Surface Mount	3V @ 250µA	46 nC @ 10 V	60 V	±20V	2506 pF @ 30 V	-	-	8-SOP	-	1.7W (Tc)	-55°C ~ 150°C (TJ)
GT095N04D5 MOSFET N-CH 40V 54A DFN5*6-8L Goford Semiconductor	4,440	-	询价单	数据表	SGT	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	4.5V, 10V	6mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	23 nC @ 10 V	40 V	±20V	942 pF @ 20 V	-	-	8-DFN (4.9x5.75)	-	29.8W (Tc)	-55°C ~ 150°C (TJ)
G10N10A N100V,RD(MAX)130MOHM@10V,TO-252 Goford Semiconductor	4,272	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	4.5V, 10V	130mOhm @ 2A, 10V	Surface Mount	3V @ 250µA	15.5 nC @ 10 V	100 V	±20V	690 pF @ 25 V	-	-	TO-252	-	28W (Tc)	-55°C ~ 150°C (TJ)
G07P04S P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Goford Semiconductor	2,486	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	7A (Tc)	4.5V, 10V	18mOhm @ 7A, 10V	Surface Mount	2.5V @ 250µA	31 nC @ 10 V	40 V	±20V	1750 pF @ 20 V	-	-	8-SOP	-	2.5W (Tc)	-55°C ~ 150°C (TJ)
G12P03D3 P30V,RD(MAX)<20M@-10V,RD(MAX)<26 Goford Semiconductor	7,449	-	询价单	数据表	TrenchFET®	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	4.5V, 10V	20mOhm @ 6A, 10V	Surface Mount	2V @ 250µA	24.5 nC @ 10 V	30 V	±20V	1337 pF @ 15 V	-	-	8-DFN (3.15x3.05)	-	30W (Tc)	-55°C ~ 150°C (TJ)
G12P10KE P-100V,ESD,-12A,RD(MAX)<200M@-10 Goford Semiconductor	2,618	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	4.5V, 10V	200mOhm @ 6A, 10V	Surface Mount	3V @ 250µA	33 nC @ 10 V	100 V	±20V	1652 pF @ 50 V	-	-	TO-252	-	44.6W (Tc)	-55°C ~ 150°C (TJ)
G25N06K N60V, 25A,RD<27M@10V,VTH1.0V~2.5 Goford Semiconductor	4,980	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	27mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	25 nC @ 10 V	60 V	±20V	970 pF @ 30 V	-	-	TO-252	-	45W (Tc)	-55°C ~ 150°C (TJ)
G50N03K N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor	4,483	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	4.5V, 10V	7mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	16.6 nC @ 10 V	30 V	±20V	1245 pF @ 15 V	-	-	TO-252	-	48W (Tc)	-55°C ~ 150°C (TJ)
G15P04K P40V,RD(MAX)<39M@-10V,RD(MAX)<70 Goford Semiconductor	4,460	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	15A (Tc)	4.5V, 10V	39mOhm @ 10A, 10V	Surface Mount	3V @ 250µA	25 nC @ 10 V	40 V	±20V	930 pF @ 20 V	-	-	TO-252	-	50W (Tc)	-55°C ~ 150°C (TJ)
G23N06K N60V,RD(MAX)<35M@10V,RD(MAX)<45M Goford Semiconductor	3,415	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	4.5V, 10V	35mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	25 nC @ 10 V	60 V	±20V	1343 pF @ 15 V	-	-	TO-252	-	38W (Tc)	-55°C ~ 150°C (TJ)

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