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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G15N06KN-CH, 60V,15A,RD(MAX)<45M@10V,RD Goford Semiconductor |
11,877 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 4.5V, 10V | 45mOhm @ 8A, 10V | Surface Mount | 3V @ 250µA | 25 nC @ 10 V | 60 V | ±20V | 762 pF @ 30 V | - | - | TO-252 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
G30N03D3N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
4,905 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 13 nC @ 10 V | 30 V | ±20V | 1260 pF @ 15 V | - | - | 8-DFN (3.15x3.05) | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
G04P10HEP-100V,-4A,RD(MAX)<200M@-10V,VTH Goford Semiconductor |
3,858 | - |
|
数据表 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 4.5V, 10V | 200mOhm @ 6A, 10V | Surface Mount | 2.8V @ 250µA | 25 nC @ 10 V | 100 V | ±20V | 1647 pF @ 50 V | - | - | SOT-223 | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G2K2P10SEP-100V, 3.5A,RD<200M@-10V,VTH1V~ Goford Semiconductor |
3,755 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 4.5V, 10V | 200mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | 23 nC @ 10 V | 100 V | ±20V | 1653 pF @ 50 V | - | - | 8-SOP | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) |
|
4435P30V,RD(MAX)<20M@-10V,RD(MAX)<33 Goford Semiconductor |
3,726 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 40 nC @ 10 V | 30 V | ±20V | 1818 pF @ 15 V | - | - | 8-SOP | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G20N03KN30V,RD(MAX)<20M@10V,RD(MAX)<24M Goford Semiconductor |
2,843 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 18 nC @ 10 V | 30 V | ±20V | 923 pF @ 15 V | - | - | TO-252 | - | 33W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G140P04KMOSFET P-CH 40V 45A 60W TO-252 Goford Semiconductor |
2,500 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 10V | 12mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 42 nC @ 10 V | 40 V | ±20V | 2261 pF @ 20 V | - | - | TO-252 | - | 60W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G12P04KP40V,RD(MAX)<35M@-10V,RD(MAX)<45 Goford Semiconductor |
1,147 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | Surface Mount | 2.5V @ 250µA | 25 nC @ 10 V | 40 V | ±20V | 1163 pF @ 20 V | - | - | TO-252 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G200P04D3P-40V,-20A,RD(MAX)<75M@-10V,VTH- Goford Semiconductor |
5,000 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 16mOhm @ -5A, -10V | Surface Mount | 2.5V @ 250µA | 54 nC @ 10 V | 40 V | ±20V | 2662 pF @ 20 V | - | - | 8-DFN (3.15x3.05) | - | 30W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G075P02D5MOSFET P-CH 20V 45A DFN5*6-8L Goford Semiconductor |
5,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 45A (Tc) | 2.5V, 4.5V | 7.5mOhm @ 15A, 4.5V | Surface Mount | 1V @ 250µA | 44 nC @ 10 V | - | ±12V | 4775 pF @ 10 V | - | - | 8-DFN (4.9x5.75) | - | - | -55°C ~ 150°C (TJ) |
