订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G160N04KN40V, 25A,RD<15M@10V,VTH1.0V~2.0 Goford Semiconductor |
4,779 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 4.5V, 10V | 15mOhm @ 8A, 10V | Surface Mount | 2V @ 250µA | 20 nC @ 10 V | 40 V | ±20V | 1010 pF @ 20 V | - | - | TO-252 | - | 43W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G700P06D5P-60V,-25A,RD(MAX)<70M@-10V,VTH- Goford Semiconductor |
4,149 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 4.5V, 10V | 70mOhm @ 4A, 10V | Surface Mount | 2.5V @ 250µA | 25 nC @ 10 V | 60 V | ±20V | 1451 pF @ 30 V | - | - | 8-DFN (4.9x5.75) | - | 42W (Tc) | -55°C ~ 150°C (TJ) |
|
G10P03P30V,RD(MAX)<[email protected],RD(MAX)<3 Goford Semiconductor |
4,127 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 2.5V, 4.5V | 28mOhm @ 10A, 4.5V | Surface Mount | 1.5V @ 250µA | 44 nC @ 4.5 V | 30 V | ±12V | 2067 pF @ 15 V | - | - | 8-DFN (3.15x3.05) | - | 21.9W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G16N03SN30V, 16A,RD<10M@10V,VTH1.0V~2.5 Goford Semiconductor |
3,624 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 5V, 10V | 10mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 17 nC @ 10 V | 30 V | ±20V | 1321 pF @ 15 V | - | - | 8-SOP | - | 3.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G160P03KIP-30V,-30A,RD(MAX)<16M@-10V,VTH- Goford Semiconductor |
3,411 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 31.2 nC @ 10 V | 30 V | ±20V | 1811 pF @ 15 V | - | - | TO-252 | - | 60W (Tc) | -55°C ~ 150°C (TJ) |
|
G50N03JN30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
3,296 | - |
|
数据表 |
TrenchFET® | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 16.6 nC @ 10 V | 30 V | ±20V | 1255 pF @ 15 V | - | - | TO-251 | - | 48W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G12P06KP-60V,-12A,RD(MAX)<75M@-10V,VTH- Goford Semiconductor |
2,500 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 70mOhm @ 6A, 10V | Surface Mount | 3V @ 250µA | 23 nC @ 10 V | 60 V | ±20V | 1322 pF @ 30 V | - | - | TO-252 | - | 27W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G36N03KN30V,36A,RD<8.5M@10V,VTH1.0V~2.2 Goford Semiconductor |
2,486 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4.5V, 10V | 8.5mOhm @ 20A, 10V | Surface Mount | 2.2V @ 250µA | 14 nC @ 10 V | 30 V | ±20V | 1040 pF @ 15 V | - | - | TO-252 | - | 31W (Tc) | -55°C ~ 150°C (TJ) |
|
G15N10CN100V,RD(MAX)<110M@10V,RD(MAX)<1 Goford Semiconductor |
2,081 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 4.5V, 10V | 90mOhm @ 8A, 10V | Surface Mount | 3V @ 250µA | 22 nC @ 10 V | 100 V | ±20V | 1167 pF @ 50 V | - | - | TO-252 | - | 55W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G080P06TMOSFET P-CH 60V 195A TO-220 Goford Semiconductor |
5,000 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 7.5mOhm @ 20A, 10V | Through Hole | 4V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 294W (Tc) | -55°C ~ 150°C (TJ) |
