Goford Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 13

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G2014 N20V,RD(MAX)<[email protected],RD(MAX)<11M Goford Semiconductor	2,940	-	询价单	数据表	TrenchFET®	6-WDFN Exposed Pad	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	2.5V, 10V	7mOhm @ 5A, 10V	Surface Mount	900mV @ 250µA	17.5 nC @ 4.5 V	20 V	±12V	1710 pF @ 10 V	-	-	6-DFN (2x2)	-	3W (Tc)	-55°C ~ 150°C (TJ)
GT6K2P10KH MOSFET P-CH 100V 4.3A TO-252 Goford Semiconductor	2,310	-	询价单	数据表	SGT	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	670mOhm @ 1A, 10V	Surface Mount	4V @ 250µA	10 nC @ 10 V	100 V	±20V	247 pF @ 50 V	-	-	TO-252	-	25W (Tc)	-55°C ~ 150°C (TJ)
G35N02K N20V,RD(MAX)<[email protected],RD(MAX)<18 Goford Semiconductor	1,769	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	2.5V, 4.5V	9mOhm @ 20A, 4.5V	Surface Mount	1.2V @ 250µA	24 nC @ 4.5 V	20 V	±12V	1380 pF @ 10 V	-	-	TO-252	-	40W (Tc)	-55°C ~ 150°C (TJ)
G28N03D3 N30V,RD(MAX)<12M@10V,RD(MAX)<18M Goford Semiconductor	5,000	-	询价单	数据表	TrenchFET®	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	4.5V, 10V	12mOhm @ 16A, 10V	Surface Mount	2.5V @ 250µA	20 nC @ 10 V	30 V	±20V	896 pF @ 15 V	-	-	8-DFN (3.15x3.05)	-	23W (Tc)	-55°C ~ 150°C (TJ)
G170P03D3 P-30V, -20A,RD<18M@-10V,VTH-1V~- Goford Semiconductor	5,000	-	询价单	数据表	TrenchFET®	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	15mOhm @ 5A, 10V	Surface Mount	2.5V @ 250µA	35 nC @ 10 V	30 V	±20V	1805 pF @ 15 V	-	-	8-DFN (3.15x3.05)	-	35W (Tc)	-55°C ~ 150°C (TJ)
G450P04K MOSFET, P-CH,-40V,-11A,RD(MAX)<4 Goford Semiconductor	2,400	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	11A (Tc)	4.5V, 10V	40mOhm @ 6A, 10V	Surface Mount	2.5V @ 250µA	25 nC @ 10 V	40 V	±20V	983 pF @ 20 V	-	-	TO-252	-	48W (Tc)	-55°C ~ 150°C (TJ)
G06N10 N100V,RD(MAX)<240M@10V,VTH1.2V~3 Goford Semiconductor	4,602	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	4.5V, 10V	240mOhm @ 6A, 10V	Surface Mount	3V @ 250µA	6.2 nC @ 10 V	100 V	±20V	190 pF @ 50 V	-	-	TO-252 (DPAK)	-	25W (Tc)	-55°C ~ 175°C (TJ)
G08N06S N60V, RD(MAX)<30M@10V,RD(MAX)<40 Goford Semiconductor	7,654	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	4.5V, 10V	30mOhm @ 3A, 10V	Surface Mount	2.5V @ 250µA	50 nC @ 10 V	60 V	±20V	1360 pF @ 30 V	-	-	8-SOP	-	2.1W (Tc)	-55°C ~ 150°C (TJ)
G120N03D3 MOSFET N-CH 30V 28A DFN3*3-8L Goford Semiconductor	5,000	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	4.5V, 10V	10mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	18 nC @ 10 V	30 V	±20V	1077 pF @ 15 V	-	-	8-DFN (3.15x3.05)	-	20W (Tc)	-55°C ~ 150°C (TJ)
GT10N10 N100V, 7A,RD<140M@10V,VTH1.5V~2. Goford Semiconductor	4,267	-	询价单	数据表	SGT	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	4.5V, 10V	80mOhm @ 3.5A, 10V	Surface Mount	2.5V @ 250µA	5 nC @ 10 V	100 V	±20V	205 pF @ 50 V	-	-	TO-252	-	23W (Tc)	-55°C ~ 150°C (TJ)

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