WeEn Semiconductors|单个二极管 - 页 9

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
BYC8B-600PJ DIODE GEN PURP 600V 8A D2PAK WeEn Semiconductors	3,091	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	3.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	18 ns	20 µA @ 600 V	-	8A	-	-	Surface Mount	D2PAK	175°C (Max)
WB75FC120ALZ WB75FC120AL/NAU000/NO MARK*CHIPS WeEn Semiconductors	4,936	-	询价单	数据表	-	Die	Bulk	Active	Standard	1200 V	3.3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 1200 V	-	75A	-	-	Surface Mount	Wafer	175°C
WNSC2D101200D6J WNSC2D101200D/TO252/REEL 13" Q1 WeEn Semiconductors	2,159	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	481pF @ 1V, 1MHz	10A	-	-	Surface Mount	DPAK	-55°C ~ 175°C
BYW29ED-200,118 DIODE GEN PURP 200V 8A DPAK WeEn Semiconductors	2,689	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	200 V	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	-	8A	-	-	Surface Mount	DPAK	150°C (Max)
BYT79-500,127 DIODE GEN PURP 500V 14A TO220AC WeEn Semiconductors	4,516	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	500 V	1.38 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 500 V	-	14A	-	-	Through Hole	TO-220AC	150°C (Max)
WNSC6D10650T6J WNSC6D10650T/DFN8X8/REEL 13" Q1/ WeEn Semiconductors	2,712	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	10A	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
MURS360BJ DIODE GEN PURP 600V 3A SMB WeEn Semiconductors	37,800	-	询价单	数据表	-	DO-214AA, SMB	Tape & Reel (TR)	Active	Standard	600 V	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 µA @ 600 V	-	3A	-	-	Surface Mount	SMB	175°C (Max)
WNSC6D08650Q DIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors	9,986	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.4 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	402pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220AC	175°C
WNSC2D1012006Q DIODE SIL CARB 1.2KV 10A TO220AC WeEn Semiconductors	7,186	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	481pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
BYC40W-1200PQ BYC40W-1200P/TO247-2L/STANDARD M WeEn Semiconductors	3,619	-	询价单	数据表	-	TO-247-2	Bulk	Active	Standard	1200 V	3.3 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	91 ns	250 µA @ 1200 V	-	40A	-	-	Through Hole	TO-247-2	175°C

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