| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC2D0512006QDIODE SIL CARB 1.2KV 5A TO220AC WeEn Semiconductors |
5,992 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 260pF @ 1V, 1MHz | 5A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
WNSC2D06650XQDIODE SIL CARBIDE 650V 6A TO220F WeEn Semiconductors |
7,880 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 198pF @ 1V, 1MHz | 6A | - | - | Through Hole | TO-220F | 175°C |
|
WNSC2D06650QDIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors |
7,376 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 198pF @ 1V, 1MHz | 6A | - | - | Through Hole | TO-220AC | 175°C |
|
BYV30-600PQDIODE GEN PURP 600V 30A TO220AC WeEn Semiconductors |
6,376 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | Standard | 600 V | 1.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | - | 30A | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
BYV30X-600PQDIODE GEN PURP 600V 30A TO220FP WeEn Semiconductors |
9,906 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 1.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | - | 30A | - | - | Through Hole | TO-220FP | 175°C (Max) |
|
BYC30B-600PJDIODE GEN PURP 600V 30A D2PAK WeEn Semiconductors |
7,679 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | 30A | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
BYV30W-600PT2QBYV30W-600PT2/TO247-2L/STANDARD WeEn Semiconductors |
4,238 | - |
|
数据表 |
- | TO-247-2 | Bulk | Active | Standard | 600 V | 1.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | - | 30A | - | - | Through Hole | TO-247-2 | 175°C |
|
WB60FV60ALZWB60FV60AL/NAU000/NO MARK*CHIPS WeEn Semiconductors |
8,297 | - |
|
数据表 |
- | Die | Bulk | Active | Standard | 600 V | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 600 V | - | 60A | - | - | Surface Mount | Wafer | -40°C ~ 175°C |
|
WB75FC65ALZWB75FC65AL/NAU000/NO MARK*CHIPS WeEn Semiconductors |
3,597 | - |
|
数据表 |
- | Die | Bulk | Active | Standard | 650 V | 2.75 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 650 V | - | 75A | - | - | Surface Mount | Wafer | 175°C |
|
WBSF30FC120ALVWBSF30FC120AL/NAU000/NO MARK*CHI WeEn Semiconductors |
7,519 | - |
|
数据表 |
- | Die | Bulk | Active | Standard | 1200 V | 3.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 250 µA @ 1200 V | - | 30A | - | - | Surface Mount | Wafer | 175°C |