WeEn Semiconductors|单个二极管 - 页 5

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
BYC30JT-600PSQ DIODE GEN PURP 600V 30A TO3PF WeEn Semiconductors	8,727	-	询价单	数据表	-	TO-3PFM, SC-93-3	Tube	Active	Standard	600 V	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	22 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-3PF	175°C
WB45SD160ALZ WB45SD160AL/NAU000/NO MARK*CHIPS WeEn Semiconductors	8,349	-	询价单	数据表	-	Die	Bulk	Active	Standard	1600 V	1.4 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	45A	-	-	Surface Mount	Wafer	150°C
BYV30JT-600PMQ BYV30JT-600PM/TO3PF/STANDARD MAR WeEn Semiconductors	8,470	-	询价单	数据表	-	TO-3P-3, SC-65-3	Bulk	Active	Standard	600 V	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-3PF	175°C
WB30FV60ALZ WB30FV60AL/NAU000/NO MARK*CHIPS WeEn Semiconductors	8,081	-	询价单	数据表	-	Die	Bulk	Active	Standard	600 V	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	30A	-	-	Surface Mount	Wafer	-40°C ~ 175°C
BYC58X-600,127 DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors	2,526	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	3.2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	12.5 ns	150 µA @ 600 V	-	8A	-	-	Through Hole	TO-220FP	150°C (Max)
WNSC2D051200D6J WNSC2D051200D/TO252/REEL 13" Q1 WeEn Semiconductors	4,281	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 1200 V	260pF @ 1V, 1MHz	5A	-	-	Surface Mount	DPAK	-55°C ~ 175°C
BYC20-600,127 DIODE GEN PURP 500V 20A TO220AC WeEn Semiconductors	5,624	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	500 V	2.9 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	200 µA @ 600 V	-	20A	-	-	Through Hole	TO-220AC	150°C (Max)
BYC20D-600PQ DIODE GEN PURP 600V 20A TO220AC WeEn Semiconductors	5,761	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	600 V	2.9 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	10 µA @ 600 V	-	20A	-	-	Through Hole	TO-220AC	175°C (Max)
WNB199V5APTSV WNB199V5APTS/NAU000/NO MARK*CHIP WeEn Semiconductors	2,990	-	询价单	数据表	-	Die	Bulk	Active	Standard	600 V	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	-	60A	-	-	Surface Mount	Wafer	175°C
WNSC6D04650Q DIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors	9,581	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.4 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	233pF @ 1V, 1MHz	4A	-	-	Through Hole	TO-220AC	175°C

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