| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WB30FC120ALZWB30FC120AL/NAU000/NO MARK*CHIPS WeEn Semiconductors |
8,806 | - |
|
数据表 |
- | Die | Bulk | Active | Standard | 1200 V | 3.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 250 µA @ 1200 V | - | 30A | - | - | Surface Mount | Wafer | 175°C |
|
BYC30Y-600PQBYC30Y-600P/IITO220-2L/STANDARD WeEn Semiconductors |
3,247 | - |
|
数据表 |
- | TO-220-2 | Bulk | Active | Standard | 600 V | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | 30A | - | - | Through Hole | IITO-220-2L | 175°C |
|
BYC30DW-600PQDIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors |
2,954 | - |
|
数据表 |
- | TO-247-2 | Bulk | Active | Standard | 600 V | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 33 ns | 10 µA @ 600 V | - | 30A | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
BYC30MW-650PT2QBYC30MW-650PT2/TO247-2L/STANDARD WeEn Semiconductors |
2,749 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 650 V | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 38 ns | 30 µA @ 650 V | - | 30A | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
|
BYC30-1200PQDIODE GEN PURP 1.2KV 30A TO220AC WeEn Semiconductors |
9,597 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | Standard | 1200 V | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 250 µA @ 1200 V | - | 30A | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
BYC8X-600P,127DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors |
5,038 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 1.9 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 18 ns | 20 µA @ 600 V | - | 8A | - | - | Through Hole | TO-220FP | 175°C (Max) |
|
BYV30W-600PQDIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors |
6,523 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 600 V | 1.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | - | 30A | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
BYC30WT-600PSQBYC30WT-600PS/TO-247/STANDARD MA WeEn Semiconductors |
5,353 | - |
|
数据表 |
- | TO-247-3 | Bulk | Active | Standard | 600 V | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | 30A | - | - | Through Hole | TO-247-3 | 175°C |
|
BYV30B-600PJDIODE GEN PURP 600V 30A D2PAK WeEn Semiconductors |
3,448 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 1.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | - | 30A | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
WNSC6D06650QDIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors |
9,656 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.4 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 327pF @ 1V, 1MHz | 6A | - | - | Through Hole | TO-220AC | 175°C |