| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYV40W-600PQDIODE GEN PURP 600V 40A TO247-2 WeEn Semiconductors |
6,342 | - |
|
数据表 |
- | TO-247-2 | Bulk | Active | Standard | 600 V | 1.6 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 79 ns | 10 µA @ 600 V | - | 40A | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
BYR16W-1200QDIODE GEN PURP 1.2KV 16A TO247-2 WeEn Semiconductors |
8,338 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 2.7 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 105 ns | 100 µA @ 1200 V | - | 16A | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
MURS160JDIODE GEN PURP 600V 1A SMAE WeEn Semiconductors |
2,277 | - |
|
数据表 |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Standard | 600 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | - | 1A | - | - | Surface Mount | SMAE | 175°C |
|
WNSC6D10650D6JWNSC6D10650D/TO252/REEL 13" Q1/T WeEn Semiconductors |
8,362 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | 10A | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
MURS160BJDIODE GEN PURP 600V 1A SMB WeEn Semiconductors |
36,232 | - |
|
数据表 |
- | DO-214AA, SMB | Tape & Reel (TR) | Active | Standard | 600 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | - | 1A | - | - | Surface Mount | SMB | 175°C (Max) |
|
WNSC2D10650XQDIODE SIL CARB 650V 10A TO220F WeEn Semiconductors |
6,752 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220F | 175°C |
|
WNSC6D106506QWNSC6D10650/TO-220AC/STANDARD MA WeEn Semiconductors |
8,531 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.4 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220AC | 175°C |
|
WNSC6D10650B6JWNSC6D10650B/TO263/REEL 13" Q1/T WeEn Semiconductors |
6,070 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | 10A | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
WNSC6D10650X6QWNSC6D10650X/TO220F-2L/STANDARD WeEn Semiconductors |
2,760 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
BYC30W-600PT2-AQBYC30W-600PT2-A/TO247-2L/STANDAR WeEn Semiconductors |
4,460 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 600 V | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 54 ns | 10 µA @ 600 V | - | 30A | - | - | Through Hole | TO-247-2 | 175°C |