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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
WB35SD160ALZ

WB35SD160ALZ

WB35SD160AL/NAU000/NO MARK*CHIPS

WeEn Semiconductors

5,367 -
WB35SD160ALZ

数据表

- Die Bulk Active Standard 1600 V 1.2 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - 35A - - Surface Mount Wafer 150°C
BYC10B-600,118

BYC10B-600,118

DIODE GEN PURP 500V 10A D2PAK

WeEn Semiconductors

7,409 -
BYC10B-600,118

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 500 V 2.9 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 200 µA @ 600 V - 10A - - Surface Mount D2PAK 150°C (Max)
BYC5B-600,118

BYC5B-600,118

DIODE GEN PURP 500V 5A D2PAK

WeEn Semiconductors

2,189 -
BYC5B-600,118

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 500 V 2.9 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V - 5A - - Surface Mount D2PAK 150°C (Max)
BYR29X-600,127

BYR29X-600,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors

5,337 -
BYR29X-600,127

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V - 8A - - Through Hole TO-220FP 150°C (Max)
WND35P08XQ

WND35P08XQ

WND35P08X/TO-220F/STANDARD MARKI

WeEn Semiconductors

2,918 -
WND35P08XQ

数据表

- TO-220-2 Full Pack, Isolated Tab Bulk Active Standard 800 V 1.4 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - 35A - - Through Hole TO-220F -40°C ~ 150°C
BYC30M-650PQ

BYC30M-650PQ

BYC30M-650P/TO220-2L/STANDARD MA

WeEn Semiconductors

4,893 -
BYC30M-650PQ

数据表

- TO-220-2 Tube Active Standard 650 V 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 38 ns 30 µA @ 650 V - 30A - - Through Hole TO-220-2L -65°C ~ 175°C
WNSC2D04650Q

WNSC2D04650Q

DIODE SIL CARB 650V 4A TO220AC

WeEn Semiconductors

7,392 -
WNSC2D04650Q

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 125pF @ 1V, 1MHz 4A - - Through Hole TO-220AC 175°C
WND35P08Q

WND35P08Q

WND35P08/TO-220AC/STANDARD MARKI

WeEn Semiconductors

6,847 -
WND35P08Q

数据表

- TO-220-2 Bulk Active Standard 800 V 1.4 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 600 V - 35A - - Through Hole TO-220AC -40°C ~ 150°C
BYC30MX-650PQ

BYC30MX-650PQ

BYC30MX-650P/TO220F-2L/STANDARD

WeEn Semiconductors

2,031 -
BYC30MX-650PQ

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 650 V 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 24 ns 30 µA @ 650 V - 30A - - Through Hole TO-220F -65°C ~ 175°C
BYC15X-600,127

BYC15X-600,127

DIODE GEN PURP 500V 15A TO220FP

WeEn Semiconductors

2,467 -
BYC15X-600,127

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 500 V 2.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 200 µA @ 600 V - 15A - - Through Hole TO-220FP 150°C (Max)
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