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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
BYC5DX-500,127

BYC5DX-500,127

DIODE GEN PURP 500V 5A TO220FP

WeEn Semiconductors

2,112 -
BYC5DX-500,127

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 500 V 2 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 40 µA @ 500 V - 5A - - Through Hole TO-220FP 150°C (Max)
BYV29F-600,127

BYV29F-600,127

DIODE GEN PURP 600V 9A TO220AC

WeEn Semiconductors

3,735 -
BYV29F-600,127

数据表

- TO-220-2 Tube Active Standard 600 V 1.9 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - 9A - - Through Hole TO-220AC 150°C (Max)
BYV29B-600PJ

BYV29B-600PJ

DIODE GEN PURP 600V 9A D2PAK

WeEn Semiconductors

7,933 -
BYV29B-600PJ

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V - 9A - - Surface Mount D2PAK 175°C (Max)
SK8DJ

SK8DJ

DIODE GEN PURP 800V 8A DPAK

WeEn Semiconductors

7,200 -
SK8DJ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 800 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 800 V - 8A - - Surface Mount DPAK 150°C (Max)
BYC405X-400PQ

BYC405X-400PQ

DIODE GEN PURP 400V 10A TO220F

WeEn Semiconductors

5,706 -
BYC405X-400PQ

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active Standard 400 V 1.5 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 400 V - 10A - - Through Hole TO-220F 150°C
BYV29X-500,127

BYV29X-500,127

DIODE GEN PURP 500V 9A TO220FP

WeEn Semiconductors

9,522 -
BYV29X-500,127

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 500 V 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 500 V - 9A - - Through Hole TO-220FP 150°C (Max)
BYV29-600,127

BYV29-600,127

DIODE GEN PURP 600V 9A TO220AC

WeEn Semiconductors

2,300 -
BYV29-600,127

数据表

- TO-220-2 Tube Active Standard 600 V 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 600 V - 9A - - Through Hole TO-220AC 150°C (Max)
BYC5-1200PQ

BYC5-1200PQ

DIODE GEN PURP 1.2KV 5A TO220AC

WeEn Semiconductors

4,934 -
BYC5-1200PQ

数据表

- TO-220-2 Tube Active Standard 1200 V 3.2 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 36 ns 100 µA @ 1200 V - 5A - - Through Hole TO-220AC 175°C (Max)
BYV25G-600,127

BYV25G-600,127

DIODE GEN PURP 600V 5A I2PAK

WeEn Semiconductors

9,783 -
BYV25G-600,127

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active Standard 600 V 1.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 600 V - 5A - - Through Hole TO-262 (I2PAK) 150°C (Max)
BYV29G-600,127

BYV29G-600,127

DIODE GEN PURP 600V 9A I2PAK

WeEn Semiconductors

8,282 -
BYV29G-600,127

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active Standard 600 V 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 600 V - 9A - - Through Hole TO-262 (I2PAK) 150°C (Max)
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