订单满￥1000免运费

富聪科技 | 全球电子元器件分销商

24小时咨询热线 0755 83957878

单个二极管

制造商	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

全部重置

全部应用

结果

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
GP10GEHE3/91 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	6,801	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	400 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 400 V	8pF @ 4V, 1MHz	1A	Automotive	AEC-Q101	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
SR5150H-TP Interface Micro Commercial Co	5,666	-	询价单	数据表	-	DO-201AD, Axial	Bulk	Active	Schottky	150 V	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 150 V	-	5A	-	-	Through Hole	DO-201AD	-55°C ~ 175°C
GP10GEHE3/93 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	2,411	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	400 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 400 V	8pF @ 4V, 1MHz	1A	Automotive	AEC-Q101	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
GP10GE-M3/73 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	5,652	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	400 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 400 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
IDH12SG60CXKSA2 DIODE SIL CARB 600V 12A TO220-1 Infineon Technologies	396	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	2.1 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	310pF @ 1V, 1MHz	12A	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
GP10GHM3/73 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	3,028	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	400 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 400 V	8pF @ 4V, 1MHz	1A	Automotive	AEC-Q101	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
VS-3C20ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	788	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	845pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STPSC20065DI DIODE SIC 650V 20A TO220AC INS STMicroelectronics	599	-	询价单	数据表	ECOPACK®2	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	20A	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
GP10G-M3/73 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	4,184	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	400 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 400 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
MSC030SDA070B DIODE SIL CARBIDE 700V 60A TO247 Microchip Technology	118	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	1200pF @ 1V, 1MHz	60A	-	-	Through Hole	TO-247	-55°C ~ 175°C
DSP45-18A DIODE GEN PURP 1.8KV 45A TO247 IXYS	5,823	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	1800 V	1.26 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1800 V	18pF @ 400V, 1MHz	45A	-	-	Through Hole	TO-247 (IXTH)	-40°C ~ 175°C
GP10JE-M3/73 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	9,836	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 600 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
FFSP3065B DIODE SIL CARB 650V 30A TO220-2 onsemi	1,216	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	30A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
GP10JHM3/73 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	2,630	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 600 V	8pF @ 4V, 1MHz	1A	Automotive	AEC-Q101	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
VS-40EPF02-M3 DIODE GP 200V 40A TO247AC Vishay General Semiconductor - Diodes Division	466	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	200 V	1.25 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 200 V	-	40A	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
GP10J-M3/73 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	5,643	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 600 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
IDH16G120C5XKSA1 DIODE SIL CARB 1.2KV 16A TO220-1 Infineon Technologies	243	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.95 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	730pF @ 1V, 1MHz	16A	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
C3D16065A DIODE SIL CARB 650V 39A TO220-2 Wolfspeed, Inc.	1,048	-	询价单	数据表	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	95 µA @ 650 V	878pF @ 0V, 1MHz	39A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-80APS08-M3 DIODE GEN PURP 800V 80A TO247AC Vishay General Semiconductor - Diodes Division	1,237	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	800 V	1.17 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 800 V	-	80A	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
DSEI60-10A DIODE GEN PURP 1KV 60A TO247AD IXYS	287	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1000 V	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 mA @ 1000 V	-	60A	-	-	Through Hole	TO-247AD	-40°C ~ 150°C

共 47618 条记录«上一页 1... 2087 2088 2089 209020912092 2093 2094...2381 下一页»

搜索

产品

电话

用户

[email protected]

0755 83957878