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制造商	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
GP10AHM3/73 DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division	6,566	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	50 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 50 V	8pF @ 4V, 1MHz	1A	Automotive	AEC-Q101	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
GP10A-M3/73 DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division	6,288	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	50 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 50 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
GP10BEHM3/73 DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division	9,741	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	100 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 100 V	8pF @ 4V, 1MHz	1A	Automotive	AEC-Q101	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
GP10BE-M3/73 DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division	3,843	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	100 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 100 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
GP10BHM3/73 DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division	3,990	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	100 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 100 V	8pF @ 4V, 1MHz	1A	Automotive	AEC-Q101	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
STPSC10H12DY DIODE SIL CARB 1.2KV 10A TO220AC STMicroelectronics	125	-	询价单	数据表	ECOPACK®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	10A	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
1N5617US DIODE GEN PURP 400V 1A D-5A Microchip Technology	608	-	询价单	数据表	-	SQ-MELF, A	Bulk	Active	Standard	400 V	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 400 V	35pF @ 12V, 1MHz	1A	-	-	Surface Mount	D-5A	-65°C ~ 175°C
VS-60APU02-N3 DIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division	438	-	询价单	数据表	FRED Pt®	TO-247-3	Tube	Active	Standard	200 V	1.08 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	28 ns	50 µA @ 200 V	-	60A	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
SCS210AJTLL DIODE SIL CARB 650V 10A TO263AB Rohm Semiconductor	1,249	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	10A	-	-	Surface Mount	TO-263AB	175°C (Max)
STTH6012W DIODE GEN PURP 1.2KV 60A DO247 STMicroelectronics	4,917	-	询价单	数据表	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	2.25 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	125 ns	30 µA @ 1200 V	-	60A	-	-	Through Hole	DO-247	175°C (Max)
GD20MPS12A DIODE SIL CARB 1.2KV 42A TO220-2 GeneSiC Semiconductor	2,307	-	询价单	数据表	SiC Schottky MPS™	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	737pF @ 1V, 1MHz	42A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-65EPF12LHM3 DIODE GEN PURP 1.2KV 65A TO247AD Vishay General Semiconductor - Diodes Division	140	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	1.42 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	65A	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
FFSP10120A DIODE SIL CARB 1.2KV 10A TO220L onsemi	689	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	612pF @ 1V, 100kHz	10A	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
JANTX1N5804 DIODE GEN PURP 100V 1A AXIAL Microchip Technology	148	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	100 V	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	1A	Military	MIL-PRF-19500/477	Through Hole	A, Axial	-65°C ~ 175°C
1N5711-1 DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	836	-	询价单	数据表	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	70 V	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	33mA	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
VS-40HF10 DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	102	-	询价单	数据表	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 100 V	-	40A	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
SCS205KGC17 DIODE SIC 1.2KV 5A TO220ACFP Rohm Semiconductor	740	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	270pF @ 1V, 1MHz	5A	-	-	Through Hole	TO-220ACFP	175°C
DPG60I400HA DIODE GEN PURP 400V 60A TO247 IXYS	284	-	询价单	数据表	HiPerFRED™	TO-247-2	Tube	Active	Standard	400 V	1.47 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	1 µA @ 400 V	-	60A	-	-	Through Hole	TO-247	-55°C ~ 175°C
C3D08065I DIODE SIL CARB 650V 16.5A TO220 Wolfspeed, Inc.	178	-	询价单	数据表	Z-Rec®	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	441pF @ 0V, 1MHz	16.5A	-	-	Through Hole	TO-220-2 Isolated Tab	-55°C ~ 175°C
STPSC20065D DIODE SIL CARB 650V 20A TO220AC STMicroelectronics	975	-	询价单	数据表	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	20A	-	-	Through Hole	TO-220AC	-40°C ~ 175°C

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