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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
S4D20120H

S4D20120H

DIODE SIL CARB 1.2KV 20A TO247AC

SMC Diode Solutions

300 -
S4D20120H

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 721pF @ 0V, 1MHz 20A - - Through Hole TO-247AC -55°C ~ 175°C
IDK16G120C5XTMA1

IDK16G120C5XTMA1

DIODE SIL CARB 1.2KV 40A TO263-1

Infineon Technologies

437 -
IDK16G120C5XTMA1

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 1.95 V @ 16 A No Recovery Time > 500mA (Io) - 80 µA @ 1200 V 730pF @ 1V, 1MHz 40A - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
SCS215AJTLL

SCS215AJTLL

DIODE SIL CARB 650V 15A TO263AB

Rohm Semiconductor

3,996 -
SCS215AJTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz 15A - - Surface Mount TO-263AB 175°C (Max)
S3D50065D1

S3D50065D1

DIODE SIL CARB 650V 112A TO247AD

SMC Diode Solutions

244 -
S3D50065D1

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 3100pF @ 0V, 100MHz 112A - - Through Hole TO-247AD -55°C ~ 175°C
STPSC20065DY

STPSC20065DY

DIODE SIL CARB 650V 20A TO220AC

STMicroelectronics

498 -
STPSC20065DY

数据表

ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 600 V 1250pF @ 0V, 1MHz 20A Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
VS-HFA16PB120-N3

VS-HFA16PB120-N3

DIODE GP 1.2KV 16A TO247AC

Vishay General Semiconductor - Diodes Division

891 -
VS-HFA16PB120-N3

数据表

- TO-247-2 Tube Active Standard 1200 V 3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 20 µA @ 1200 V - 16A Automotive AEC-Q101 Through Hole TO-247AC Modified -55°C ~ 150°C
DNA30E2200FE

DNA30E2200FE

DIODE GEN PURP 2.2KV 30A I4-PAC

IXYS

109 -
DNA30E2200FE

数据表

- TO-251-2, IPAK Tube Active Standard 2200 V 1.25 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz 30A - - Through Hole i4-PAC -55°C ~ 175°C
FFSH3065B-F085

FFSH3065B-F085

DIODE SIL CARB 650V 37A TO247-2

onsemi

466 -
FFSH3065B-F085

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 1260pF @ 1V, 100kHz 37A Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
C6D20065A

C6D20065A

DIODE SIL CARB 650V 66A TO220-2

Wolfspeed, Inc.

351 -
C6D20065A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 1153pF @ 0V, 1MHz 66A - - Through Hole TO-220-2 -55°C ~ 175°C
VS-40HFR120

VS-40HFR120

DIODE GEN PURP 1.2KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

106 -
VS-40HFR120

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1200 V - 40A - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
V7N103-M3/H

V7N103-M3/H

7A, 100V, DFN3820A TRENCH SKY RE

Vishay

8,837 -
V7N103-M3/H

数据表

- 2-VDFN Tape & Reel (TR) Active Schottky 100 V 660 mV @ 7 A Fast Recovery =< 500ns, > 200mA (Io) - 330 µA @ 100 V 860pF @ 4V, 1MHz 7A - - Surface Mount, Wettable Flank DFN3820A -40°C ~ 150°C
STPSC15H12G2Y-TR

STPSC15H12G2Y-TR

DIODE SIL CARB 1.2KV 15A D2PAK

STMicroelectronics

931 -
STPSC15H12G2Y-TR

数据表

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 1200 V 1200pF @ 0V, 1MHz 15A Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
V7NM103-M3/H

V7NM103-M3/H

7A, 100V, DFN3820A TRENCH SKY RE

Vishay

9,188 -
V7NM103-M3/H

数据表

- 2-VDFN Tape & Reel (TR) Active Schottky 100 V 720 mV @ 7 A Fast Recovery =< 500ns, > 200mA (Io) - 160 µA @ 100 V 770pF @ 4V, 1MHz 7A - - Surface Mount, Wettable Flank DFN3820A -40°C ~ 175°C
UJ3D1220KSD

UJ3D1220KSD

DIODE SIL CARB 1.2KV 10A TO247-3

Qorvo

1,188 -
UJ3D1220KSD

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 220 µA @ 1200 V 1020pF @ 1V, 1MHz 10A - - Through Hole TO-247-3 -55°C ~ 175°C
RS1BLHR3G

RS1BLHR3G

DIODE GP 100V 800MA SUB SMA

Taiwan Semiconductor Corporation

9,428 -
RS1BLHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 100 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 100 V 10pF @ 4V, 1MHz 800mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RS1DLHR3G

RS1DLHR3G

DIODE GP 200V 800MA SUB SMA

Taiwan Semiconductor Corporation

9,576 -
RS1DLHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 200 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 200 V 10pF @ 4V, 1MHz 800mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RS1GLHR3G

RS1GLHR3G

DIODE GP 400V 800MA SUB SMA

Taiwan Semiconductor Corporation

9,599 -
RS1GLHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 400 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 10pF @ 4V, 1MHz 800mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RS1JLHR3G

RS1JLHR3G

DIODE GP 600V 800MA SUB SMA

Taiwan Semiconductor Corporation

9,267 -
RS1JLHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 600 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 600 V 10pF @ 4V, 1MHz 800mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RS1KLHR3G

RS1KLHR3G

DIODE GP 800V 800MA SUB SMA

Taiwan Semiconductor Corporation

7,540 -
RS1KLHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 800 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 800 V 10pF @ 4V, 1MHz 800mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RSFALHR3G

RSFALHR3G

DIODE GEN PURP 50V 500MA SUB SMA

Taiwan Semiconductor Corporation

7,898 -
RSFALHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 50 V 1.3 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 50 V 4pF @ 4V, 1MHz 500mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
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