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制造商	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
VS-60EPF12-M3 DIODE GP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division	494	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	1.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	60A	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
1N3595US DIODE GEN PURP 4A B SQ-MELF Microchip Technology	158	-	询价单	数据表	-	SQ-MELF, B	Bulk	Active	Standard	-	1 V @ 200 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	1 nA @ 125 V	-	4A	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 150°C
DSEP15-12CR DIODE GP 1.2KV 15A ISOPLUS247 IXYS	265	-	询价单	数据表	HiPerDynFRED™	TO-247-3	Tube	Active	Standard	1200 V	4.04 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	100 µA @ 1200 V	-	15A	-	-	Through Hole	ISOPLUS247™	-55°C ~ 175°C
1N1184 DIODE GEN PURP 100V 35A DO5 GeneSiC Semiconductor	191	-	询价单	数据表	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	1.2 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	35A	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 190°C
CDLL5711 DIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology	265	-	询价单	数据表	-	DO-213AA	Bulk	Active	Schottky	50 V	410 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	33mA	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
1N1184A DIODE GEN PURP 100V 40A DO5 GeneSiC Semiconductor	260	-	询价单	数据表	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	1.1 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	40A	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 200°C
SCS320AJTLL DIODE SIL CARBIDE 650V 20A LPTL Rohm Semiconductor	612	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1000pF @ 1V, 1MHz	20A	-	-	Surface Mount	LPTL	175°C (Max)
1N5416US DIODE GEN PURP 100V 3A D-5B Microchip Technology	111	-	询价单	数据表	-	SQ-MELF, E	Bulk	Active	Standard	100 V	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	3A	-	-	Surface Mount	D-5B	-65°C ~ 175°C
MSC030SDA120B DIODE SIL CARB 1.2KV 30A TO247 Microchip Technology	1,046	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	-	-	30A	-	-	Through Hole	TO-247	-
DSEP60-12A DIODE GEN PURP 1.2KV 60A TO247AD IXYS	258	-	询价单	数据表	HiPerFRED™	TO-247-2	Tube	Active	Standard	1200 V	2.66 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	650 µA @ 1200 V	-	60A	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
DSEP90-12AZ-TUB DIODE GEN PURP 1.2KV 90A TO268AA IXYS	156	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	1200 V	2.69 V @ 90 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	1 mA @ 1200 V	48pF @ 600V, 1MHz	90A	-	-	Surface Mount	TO-268AA (D3Pak-HV)	-55°C ~ 175°C
VS-88HF80 DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division	152	-	询价单	数据表	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	800 V	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	85A	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
1N2130AR DIODE GEN PURP REV 150V 60A DO5 GeneSiC Semiconductor	245	-	询价单	数据表	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	150 V	1.1 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	60A	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 200°C
MSC020SDA120S DIODE SIL CARB 1.2KV 49A D3PAK Microchip Technology	869	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1130pF @ 1V, 1MHz	49A	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
VS-85HFR80 DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division	300	-	询价单	数据表	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 800 V	-	85A	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
STPSC40065CWY DIODE SIL CARB 650V 20A TO247-3 STMicroelectronics	207	-	询价单	数据表	ECOPACK®2	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	20A	Automotive	AEC-Q101	Through Hole	TO-247-3	-40°C ~ 175°C
VS-80APF12-M3 DIODE GEN PURP 1.2KV 80A TO247AC Vishay General Semiconductor - Diodes Division	384	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	1200 V	1.35 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	80A	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
JANTX1N5190 DIODE GEN PURP 600V 3A AXIAL Microchip Technology	189	-	询价单	数据表	-	B, Axial	Bulk	Active	Standard	600 V	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	2 µA @ 600 V	-	3A	Military	MIL-PRF-19500/424	Through Hole	B, Axial	-
1N3611GP-M3/54 DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division	4,156	-	询价单	数据表	SUPERECTIFIER®	DO-204AL, DO-41, Axial	Tape & Reel (TR)	Obsolete	Standard	200 V	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
1N4001GPE-M3/54 DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division	3,056	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Reel (TR)	Obsolete	Standard	50 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C

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