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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
RSFDLHR3G

RSFDLHR3G

DIODE GP 200V 500MA SUB SMA

Taiwan Semiconductor Corporation

6,869 -
RSFDLHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 200 V 1.3 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 200 V 4pF @ 4V, 1MHz 500mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RSFGLHR3G

RSFGLHR3G

DIODE GP 400V 500MA SUB SMA

Taiwan Semiconductor Corporation

8,654 -
RSFGLHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 400 V 1.3 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 4pF @ 4V, 1MHz 500mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RSFKLHR3G

RSFKLHR3G

DIODE GP 800V 500MA SUB SMA

Taiwan Semiconductor Corporation

4,665 -
RSFKLHR3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 800 V 1.3 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 800 V 4pF @ 4V, 1MHz 500mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RS1ALHRUG

RS1ALHRUG

DIODE GEN PURP 50V 800MA SUB SMA

Taiwan Semiconductor Corporation

3,360 -
RS1ALHRUG

数据表

- DO-219AB Tape & Reel (TR) Active Standard 50 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 50 V 10pF @ 4V, 1MHz 800mA Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RM 1V1

RM 1V1

DIODE GEN PURP 400V 1A AXIAL

Sanken Electric USA Inc.

8,806 -
RM 1V1

数据表

- Axial Tape & Box (TB) Obsolete Standard 400 V 950 mV @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V - 1A - - Through Hole Axial -40°C ~ 150°C
ER3DBHE3-TP

ER3DBHE3-TP

Interface

Micro Commercial Co

7,953 -
ER3DBHE3-TP

数据表

- DO-214AA, SMB Bulk Active Standard 200 V 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V 50pF @ 4V, 1MHz 3A - - Surface Mount DO-214AA (SMB) -55°C ~ 150°C
V6PW10-M3/I

V6PW10-M3/I

DIODE SCHOTTKY 100V 6A SLIMDPAK

Vishay General Semiconductor - Diodes Division

3,344 -
V6PW10-M3/I

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 100 V 710 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 100 V 590pF @ 4V, 1MHz 6A Automotive AEC-Q101 Surface Mount SlimDPAK -40°C ~ 150°C
VS-4ESH02-M3/87A

VS-4ESH02-M3/87A

DIODE GEN PURP 200V 4A TO277A

Vishay General Semiconductor - Diodes Division

6,864 -
VS-4ESH02-M3/87A

数据表

FRED Pt® TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 200 V 930 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 200 V - 4A - - Surface Mount TO-277A (SMPC) -65°C ~ 175°C
GP10KHM3/73

GP10KHM3/73

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,323 -
GP10KHM3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 800 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 800 V 7pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10K-M3/73

GP10K-M3/73

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,687 -
GP10K-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 800 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 800 V 7pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10MEHE3/53

GP10MEHE3/53

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,467 -
GP10MEHE3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1000 V 7pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10MHM3/73

GP10MHM3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,274 -
GP10MHM3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1000 V 7pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10M-M3/73

GP10M-M3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,971 -
GP10M-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1000 V 7pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
ES2G/1

ES2G/1

DIODE SUPERFAST SMB 400V 25NS

Vishay General Semiconductor - Diodes Division

6,288 -
ES2G/1

数据表

- DO-214AA, SMB Tape & Reel (TR) Obsolete Standard 400 V 1.1 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 15pF @ 4V, 1MHz 2A - - Surface Mount DO-214AA (SMB) -50°C ~ 150°C
SS3P3L-M3/87A

SS3P3L-M3/87A

DIODE SCHOTTKY 30V 3A TO277A

Vishay General Semiconductor - Diodes Division

8,846 -
SS3P3L-M3/87A

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 30 V 470 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 30 V - 3A - - Surface Mount TO-277A (SMPC) -55°C ~ 150°C
GP10Q-M3/73

GP10Q-M3/73

DIODE GEN PURP 1.2KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,031 -
GP10Q-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1200 V 7pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
GP10W-E3/53

GP10W-E3/53

DIODE GEN PURP 1.5KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,244 -
GP10W-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 1500 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1500 V 5pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
GP10Y-E3/53

GP10Y-E3/53

DIODE GEN PURP 1.6KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,128 -
GP10Y-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 1600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1600 V 5pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
GP10Y-M3/73

GP10Y-M3/73

DIODE GEN PURP 1.6KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,908 -
GP10Y-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1600 V 5pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
1N3891

1N3891

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

887 -
1N3891

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard 200 V 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - 12A - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
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