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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
GP10D-4003-M3/73

GP10D-4003-M3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,951 -
GP10D-4003-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 200 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10-4004E-E3/53

GP10-4004E-E3/53

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,159 -
GP10-4004E-E3/53

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10-4004EHE3/53

GP10-4004EHE3/53

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,944 -
GP10-4004EHE3/53

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10-4004EHM3/73

GP10-4004EHM3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,240 -
GP10-4004EHM3/73

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10G-4004E-M3/73

GP10G-4004E-M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,372 -
GP10G-4004E-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
S5KHE3/9AT

S5KHE3/9AT

DIODE GEN PURP 800V 5A DO214AB

Vishay General Semiconductor - Diodes Division

2,152 -
S5KHE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 800 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 800 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S5MHE3/9AT

S5MHE3/9AT

DIODE GEN PURP 1KV 5A DO214AB

Vishay General Semiconductor - Diodes Division

2,695 -
S5MHE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 1000 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 1000 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S5AHE3_A/I

S5AHE3_A/I

DIODE GEN PURP 50V 5A DO214AB

Vishay General Semiconductor - Diodes Division

5,022 -
S5AHE3_A/I

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 50 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 50 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S5BHE3_A/I

S5BHE3_A/I

DIODE GEN PURP 100V 5A DO214AB

Vishay General Semiconductor - Diodes Division

7,027 -
S5BHE3_A/I

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 100 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 100 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S5DHE3_A/I

S5DHE3_A/I

DIODE GEN PURP 200V 5A DO214AB

Vishay General Semiconductor - Diodes Division

2,068 -
S5DHE3_A/I

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 200 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 200 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S5KHE3_A/I

S5KHE3_A/I

DIODE GEN PURP 800V 5A DO214AB

Vishay General Semiconductor - Diodes Division

3,260 -
S5KHE3_A/I

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 800 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 800 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
SD066SC100A.T2

SD066SC100A.T2

DIODE SCHOTTKY 100V 5A DIE

SMC Diode Solutions

8,096 -
SD066SC100A.T2

数据表

- Die Tray Active Schottky 100 V 840 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 130 µA @ 100 V 200pF @ 5V, 1MHz 5A - - Surface Mount Die -55°C ~ 200°C
HER307G-K

HER307G-K

75NS, 3A, 800V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

4,699 -
HER307G-K

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 800 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 800 V 35pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
HER308G-K

HER308G-K

75NS, 3A, 1000V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

5,208 -
HER308G-K

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 1000 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 1000 V 35pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
HER303G-K

HER303G-K

50NS, 3A, 200V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

9,942 -
HER303G-K

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 200 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
HER304G-K

HER304G-K

50NS, 3A, 300V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

8,090 -
HER304G-K

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 300 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
HER305G-K

HER305G-K

50NS, 3A, 400V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

8,621 -
HER305G-K

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 400 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
HER306G-K

HER306G-K

75NS, 3A, 600V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

8,837 -
HER306G-K

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 600 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V 35pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
HER302G-K

HER302G-K

50NS, 3A, 100V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

8,321 -
HER302G-K

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 100 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
HER301G-K

HER301G-K

50NS, 3A, 50V, HIGH EFFICIENT RE

Taiwan Semiconductor Corporation

5,094 -
HER301G-K

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 50 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
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