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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
IDH16G65C5XKSA2

IDH16G65C5XKSA2

DIODE SIL CARB 650V 16A TO220-1

Infineon Technologies

1,984 -
IDH16G65C5XKSA2

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 470pF @ 1V, 1MHz 16A - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
VS-1N3890R

VS-1N3890R

DIODE GEN PURP 100V 12A DO203AA

Vishay General Semiconductor - Diodes Division

181 -
VS-1N3890R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 25 µA @ 100 V - 12A - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
1N5553

1N5553

DIODE GEN PURP 800V 3A AXIAL

Microchip Technology

251 -
1N5553

数据表

- B, Axial Bulk Active Standard 800 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
SS29HE3_A/H

SS29HE3_A/H

DIODE SCHOTTKY 90V 1.5A DO214AA

Vishay General Semiconductor - Diodes Division

7,265 -
SS29HE3_A/H

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Schottky 90 V 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 90 V - 1.5A Automotive AEC-Q101 Surface Mount DO-214AA (SMB) -55°C ~ 150°C
GP10B-M3/73

GP10B-M3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,421 -
GP10B-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 100 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 100 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
S5GHM3/57T

S5GHM3/57T

DIODE GEN PURP 400V 5A DO214AB

Vishay General Semiconductor - Diodes Division

6,799 -
S5GHM3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 400 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 400 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
GP10DEHM3/73

GP10DEHM3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,137 -
GP10DEHM3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 200 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
FFSD10120A

FFSD10120A

DIODE SIL CARBIDE 1.2KV TO252AA

onsemi

1,706 -
FFSD10120A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 612pF @ 1V, 100kHz - - - Surface Mount TO-252AA -
ES2AHE3_A/H

ES2AHE3_A/H

DIODE GEN PURP 50V 2A DO214AA

Vishay General Semiconductor - Diodes Division

2,197 -
ES2AHE3_A/H

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Standard 50 V 900 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 10 µA @ 50 V 18pF @ 4V, 1MHz 2A Automotive AEC-Q101 Surface Mount DO-214AA (SMB) -55°C ~ 150°C
GP10DE-M3/73

GP10DE-M3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,423 -
GP10DE-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 200 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
ES2CHE3_A/H

ES2CHE3_A/H

DIODE GEN PURP 150V 2A DO214AA

Vishay General Semiconductor - Diodes Division

4,591 -
ES2CHE3_A/H

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Standard 150 V 900 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 10 µA @ 50 V 18pF @ 4V, 1MHz 2A Automotive AEC-Q101 Surface Mount DO-214AA (SMB) -55°C ~ 150°C
GP10DHM3/73

GP10DHM3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,702 -
GP10DHM3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 200 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N5551US

1N5551US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

165 -
1N5551US

数据表

- SQ-MELF, E Bulk Active Standard 400 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - 3A - - Surface Mount D-5B -65°C ~ 175°C
GP10D-M3/73

GP10D-M3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,244 -
GP10D-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 200 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10GE-E3/53

GP10GE-E3/53

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,115 -
GP10GE-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
ES2FHE3_A/H

ES2FHE3_A/H

DIODE GEN PURP 300V 2A DO214AA

Vishay General Semiconductor - Diodes Division

6,365 -
ES2FHE3_A/H

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Standard 300 V 1.1 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V 15pF @ 4V, 1MHz 2A Automotive AEC-Q101 Surface Mount DO-214AA (SMB) -55°C ~ 150°C
GP10GE-E3/91

GP10GE-E3/91

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,842 -
GP10GE-E3/91

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
CDBB340LR-HF

CDBB340LR-HF

DIODE SCHOTTKY 40V 3A DO214AA

Comchip Technology

8,052 -
CDBB340LR-HF

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Schottky 40 V 450 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V 250pF @ 4V, 1MHz 3A - - Surface Mount DO-214AA (SMB) -50°C ~ 150°C
GP10GEHE3/53

GP10GEHE3/53

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,865 -
GP10GEHE3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
SR5200H-TP

SR5200H-TP

Interface

Micro Commercial Co

3,164 -
SR5200H-TP

数据表

- DO-201AD, Axial Bulk Active Schottky 200 V 900 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 500 nA @ 200 V - 5A - - Through Hole DO-201AD -55°C ~ 175°C
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