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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SS3P5LHM3_A/I

SS3P5LHM3_A/I

DIODE SCHOTTKY 50V 3A TO277A

Vishay General Semiconductor - Diodes Division

6,509 -
SS3P5LHM3_A/I

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 50 V 600 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 50 V - 3A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 150°C
GP10-4004HE3/53

GP10-4004HE3/53

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,139 -
GP10-4004HE3/53

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10-4004HM3/73

GP10-4004HM3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,578 -
GP10-4004HM3/73

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
IDD10SG60CXTMA2

IDD10SG60CXTMA2

DIODE SIL CARB 600V 10A TO252-3

Infineon Technologies

217 -
IDD10SG60CXTMA2

数据表

CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 2.1 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 600 V 290pF @ 1V, 1MHz 10A - - Surface Mount PG-TO252-3 -55°C ~ 175°C
GP10G-4004-M3/73

GP10G-4004-M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,476 -
GP10G-4004-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10-4005E-E3/53

GP10-4005E-E3/53

DIODE GEN PURP 500V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,647 -
GP10-4005E-E3/53

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 500 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 500 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10-4005EHE3/53

GP10-4005EHE3/53

DIODE GEN PURP 500V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,807 -
GP10-4005EHE3/53

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 500 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 500 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10-4005EHM3/73

GP10-4005EHM3/73

DIODE GEN PURP 500V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,094 -
GP10-4005EHM3/73

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 500 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 500 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10J-4005E-M3/73

GP10J-4005E-M3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,050 -
GP10J-4005E-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 600 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
VS-40EPF12-M3

VS-40EPF12-M3

DIODE GP 1.2KV 40A TO247AC

Vishay General Semiconductor - Diodes Division

231 -
VS-40EPF12-M3

数据表

- TO-247-2 Tube Active Standard 1200 V 1.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1200 V - 40A - - Through Hole TO-247AC Modified -40°C ~ 150°C
GP10J-4005-M3/73

GP10J-4005-M3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,969 -
GP10J-4005-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 600 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N5806USE3

1N5806USE3

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

148 -
1N5806USE3

数据表

- SQ-MELF, A Bulk Active Standard 150 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A - - Surface Mount D-5A -65°C ~ 175°C
VS-HFA08PB120-N3

VS-HFA08PB120-N3

DIODE GP 1.2KV 8A TO247AC

Vishay General Semiconductor - Diodes Division

500 -
VS-HFA08PB120-N3

数据表

HEXFRED® TO-247-2 Tube Active Standard 1200 V 3.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 10 µA @ 1200 V - 8A - - Through Hole TO-247AC Modified -55°C ~ 150°C
GP10-4007EHE3/53

GP10-4007EHE3/53

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,696 -
GP10-4007EHE3/53

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1000 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
STPSC10H12WL

STPSC10H12WL

DIODE SIL CARB 1.2KV 10A DO247

STMicroelectronics

244 -
STPSC10H12WL

数据表

ECOPACK®2 DO-247-2 (Straight Leads) Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz 10A - - Through Hole DO-247 -40°C ~ 175°C
GP10-4007EHM3/73

GP10-4007EHM3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,574 -
GP10-4007EHM3/73

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1000 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
VS-25FR40

VS-25FR40

DIODE GEN PURP 400V 25A DO203AA

Vishay General Semiconductor - Diodes Division

101 -
VS-25FR40

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 1.3 V @ 78 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - 25A - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
GP10-4007HE3/53

GP10-4007HE3/53

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,780 -
GP10-4007HE3/53

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1000 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
CDLL5819

CDLL5819

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

144 -
CDLL5819

数据表

- DO-213AB, MELF Bulk Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A - - Surface Mount DO-213AB -65°C ~ 125°C
GP10-4007HM3/73

GP10-4007HM3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,181 -
GP10-4007HM3/73

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1000 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
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