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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SS15L RUG

SS15L RUG

DIODE SCHOTTKY 50V 1A SUB SMA

Taiwan Semiconductor Corporation

7,679 -
SS15L RUG

数据表

- DO-219AB Tape & Reel (TR) Active Schottky 50 V 700 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 400 µA @ 50 V - 1A - - Surface Mount Sub SMA -55°C ~ 150°C
STBR6012W

STBR6012W

DIODE GEN PURP 1.2KV 60A DO247

STMicroelectronics

516 -
STBR6012W

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 1200 V 1.3 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1200 V - 60A - - Through Hole DO-247 175°C (Max)
DHG30I1200HA

DHG30I1200HA

DIODE GEN PURP 1.2KV 30A TO247

IXYS

300 -
DHG30I1200HA

数据表

- TO-247-2 Tube Active Standard 1200 V 2.26 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 50 µA @ 1200 V - 30A - - Through Hole TO-247 -55°C ~ 150°C
C3D10065I

C3D10065I

DIODE SIL CARB 650V 19A TO220-2

Wolfspeed, Inc.

1,325 -
C3D10065I

数据表

Z-Rec® TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 480pF @ 0V, 1MHz 19A - - Through Hole TO-220-2 Isolated Tab -55°C ~ 175°C
STTH6012WL

STTH6012WL

DIODE GP 1.2KV 60A DO247 LL

STMicroelectronics

946 -
STTH6012WL

数据表

- TO-247-2 Tube Active Standard 1200 V 2.25 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 30 µA @ 1200 V - 60A - - Through Hole DO-247 LL 175°C
SS16L RUG

SS16L RUG

DIODE SCHOTTKY 60V 1A SUB SMA

Taiwan Semiconductor Corporation

5,725 -
SS16L RUG

数据表

- DO-219AB Tape & Reel (TR) Active Schottky 60 V 700 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 400 µA @ 60 V - 1A - - Surface Mount Sub SMA -55°C ~ 150°C
UF4002-E3/53

UF4002-E3/53

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,589 -
UF4002-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 100 V 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 17pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
UF4003-E3/53

UF4003-E3/53

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,771 -
UF4003-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 200 V 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 17pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
S5AHE3/9AT

S5AHE3/9AT

DIODE GEN PURP 50V 5A DO214AB

Vishay General Semiconductor - Diodes Division

5,090 -
S5AHE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 50 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 50 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S5BHE3/9AT

S5BHE3/9AT

DIODE GEN PURP 100V 5A DO214AB

Vishay General Semiconductor - Diodes Division

3,136 -
S5BHE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 100 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 100 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S5DHE3/9AT

S5DHE3/9AT

DIODE GEN PURP 200V 5A DO214AB

Vishay General Semiconductor - Diodes Division

6,412 -
S5DHE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 200 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 200 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S5GHE3/9AT

S5GHE3/9AT

DIODE GEN PURP 400V 5A DO214AB

Vishay General Semiconductor - Diodes Division

4,651 -
S5GHE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 400 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 400 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S5JHE3/9AT

S5JHE3/9AT

DIODE GEN PURP 600V 5A DO214AB

Vishay General Semiconductor - Diodes Division

2,021 -
S5JHE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 600 V 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 600 V 40pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
GP10-4003EHM3/73

GP10-4003EHM3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,922 -
GP10-4003EHM3/73

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 200 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10D-4003E-M3/73

GP10D-4003E-M3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,126 -
GP10D-4003E-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 200 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
STBR6012WY

STBR6012WY

DIODE GEN PURP 1.2KV 60A DO247

STMicroelectronics

112 -
STBR6012WY

数据表

ECOPACK®2 DO-247-2 (Straight Leads) Tube Active Standard 1200 V 1.3 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1200 V - 60A Automotive AEC-Q101 Through Hole DO-247 -40°C ~ 175°C
STBR6008WY

STBR6008WY

DIODE GEN PURP 800V 60A DO247

STMicroelectronics

510 -
STBR6008WY

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 800 V 1.1 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V - 60A Automotive AEC-Q101 Through Hole DO-247 -40°C ~ 175°C
GD30MPS06H

GD30MPS06H

DIODE SIL CARB 650V 49A TO247-2

GeneSiC Semiconductor

614 -
GD30MPS06H

数据表

SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V - No Recovery Time > 500mA (Io) - - 735pF @ 1V, 1MHz 49A - - Through Hole TO-247-2 -55°C ~ 175°C
VS-HFA25PB60-N3

VS-HFA25PB60-N3

DIODE GP 600V 25A TO247AC

Vishay General Semiconductor - Diodes Division

385 -
VS-HFA25PB60-N3

数据表

HEXFRED® TO-247-2 Tube Active Standard 600 V 1.7 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 20 µA @ 600 V - 25A - - Through Hole TO-247AC Modified -55°C ~ 150°C
GP10-4003HM3/73

GP10-4003HM3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,866 -
GP10-4003HM3/73

数据表

Superectifier® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 200 V 8pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
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