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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5420DIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
70 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N6640USDIODE GEN PURP 50V 300MA D-5D Microchip Technology |
49 | - |
|
数据表 |
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | 300mA | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
|
MSC010SDA170BDIODE SIL CARB 1.7KV 31A TO247-3 Microchip Technology |
47 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 820pF @ 1V, 1MHz | 31A | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
1N5711/TRDIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
5,139 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Schottky | 70 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
|
1N5711E3DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
8,728 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
CDLL1A50DIODE SCHOTTKY 50V 1A DO213AB Microchip Technology |
5,485 | - |
|
数据表 |
- | DO-213AB, MELF | Bulk | Active | Schottky | 50 V | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 50 V | 0.9pF @ 5V, 1MHz | 1A | - | - | Surface Mount | DO-213AB | - |
|
1N5802USDIODE GEN PURP 50V 1A D-5A Microchip Technology |
50 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 50 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
MSC050SDA070SDIODE SIL CARBIDE 700V 88A D3PAK Microchip Technology |
16 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 2034pF @ 1V, 1MHz | 88A | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
|
JANTX1N5420USDIODE GEN PURP 600V 3A D-5B Microchip Technology |
49 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
|
MSC050SDA120BDIODE SIC 1.2KV 109A TO247-2 Microchip Technology |
73 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 246pF @ 400V, 1MHz | 109A | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
