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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CDLL5821/TRSMALL-SIGNAL SCHOTTKY Microchip Technology |
3,634 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CD4148DIODE GEN PURP 75V 200MA DIE Microchip Technology |
868 | - |
|
数据表 |
- | Die | Tray | Active | Standard | 75 V | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | - | 200mA | - | - | Surface Mount | Die | -55°C ~ 175°C |
|
APT30DQ100KGDIODE GEN PURP 1KV 30A TO220 Microchip Technology |
58 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | Standard | 1000 V | 3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 295 ns | 100 µA @ 1000 V | - | 30A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
JAN1N3595UR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
2,685 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 125 V | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | 150mA | Military | MIL-PRF-19500/241 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
|
JAN1N6639DIODE GEN PURP 75V 300MA D-5D Microchip Technology |
4,449 | - |
|
数据表 |
- | D, Axial | Bulk | Active | Standard | 75 V | 1.2 V @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 75 V | - | 300mA | Military | MIL-PRF-19500/609 | Through Hole | D-5D | -65°C ~ 175°C |
|
|
JAN1N6640DIODE GEN PURP 50V 300MA AXIAL Microchip Technology |
4,190 | - |
|
数据表 |
- | D, Axial | Bulk | Active | Standard | 50 V | 1 V @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | 300mA | Military | MIL-PRF-19500/609 | Through Hole | D-5D | -65°C ~ 175°C |
|
|
JAN1N6641DIODE GEN PURP 50V 300MA AXIAL Microchip Technology |
5,603 | - |
|
数据表 |
- | D, Axial | Bulk | Active | Standard | 50 V | 1.1 V @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 nA @ 50 V | - | 300mA | Military | MIL-PRF-19500/609 | Through Hole | D-5D | -65°C ~ 175°C |
|
|
1N5616DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
91 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
|
JAN1N6642DIODE GEN PURP 75V 300MA AXIAL Microchip Technology |
5,447 | - |
|
数据表 |
- | D, Axial | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Through Hole | D-5D | -65°C ~ 175°C |
|
JAN1N5415/TRDIODE GEN PURP 50V 3A Microchip Technology |
8,424 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 50 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
