| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5416/TRDIODE GEN PURP 100V 3A Microchip Technology |
7,783 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5620DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
47 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
JAN1N5807/TRDIODE GEN PURP 50V 6A Microchip Technology |
3,641 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 6A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5551DIODE GEN PURP 400V 5A AXIAL Microchip Technology |
83 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 400 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | 5A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JAN1N5811/TRDIODE GEN PURP 150V 6A Microchip Technology |
8,857 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 6A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5711DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
87 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
JAN1N5417/TRDIODE GEN PURP 200V 3A Microchip Technology |
7,363 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JAN1N6643US/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
8,243 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 50 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 50 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
JANTX1N5809DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
68 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5618USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
35 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | 1A | - | - | Surface Mount | D-5A | -65°C ~ 200°C |