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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N5416/TR

JAN1N5416/TR

DIODE GEN PURP 100V 3A

Microchip Technology

7,783 -
JAN1N5416/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5620

JANTX1N5620

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

47 -
JANTX1N5620

数据表

- A, Axial Bulk Active Standard 800 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - 1A Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N5807/TR

JAN1N5807/TR

DIODE GEN PURP 50V 6A

Microchip Technology

3,641 -
JAN1N5807/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 6A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5551

JANTX1N5551

DIODE GEN PURP 400V 5A AXIAL

Microchip Technology

83 -
JANTX1N5551

数据表

- B, Axial Bulk Active Standard 400 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - 5A Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N5811/TR

JAN1N5811/TR

DIODE GEN PURP 150V 6A

Microchip Technology

8,857 -
JAN1N5811/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 6A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
1N5711

1N5711

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

87 -
1N5711

数据表

- DO-204AH, DO-35, Axial Bulk Active Schottky 70 V 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz 33mA - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
JAN1N5417/TR

JAN1N5417/TR

DIODE GEN PURP 200V 3A

Microchip Technology

7,363 -
JAN1N5417/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N6643US/TR

JAN1N6643US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

8,243 -
JAN1N6643US/TR

数据表

- SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 50 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JANTX1N5809

JANTX1N5809

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

68 -
JANTX1N5809

数据表

- B, Axial Bulk Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
1N5618US

1N5618US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

35 -
1N5618US

数据表

- SQ-MELF, A Bulk Active Standard 600 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - 1A - - Surface Mount D-5A -65°C ~ 200°C
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