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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N3957

JANTX1N3957

DIODE GEN PURP 1KV 1A

Microchip Technology

6,969 -
JANTX1N3957

数据表

- A, Axial Bulk Active Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 1000 V - 1A Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5622/TR

JANTX1N5622/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,611 -
JANTX1N5622/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1 V - 1A Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N4943/TR

1N4943/TR

UFR,FRR

Microchip Technology

3,149 -
1N4943/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
JAN1N5415

JAN1N5415

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

4,694 -
JAN1N5415

数据表

- B, Axial Bulk Active Standard 50 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5416

JAN1N5416

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

7,063 -
JAN1N5416

数据表

- B, Axial Bulk Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N6643US

JAN1N6643US

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

3,232 -
JAN1N6643US

数据表

- SQ-MELF, D Bulk Discontinued at Digi-Key Standard 50 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
1N5415/TR

1N5415/TR

DIODE GEN PURP 50V 3A

Microchip Technology

6,985 -
1N5415/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 50 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N5416/TR

1N5416/TR

DIODE GEN PURP 100V 3A

Microchip Technology

6,246 -
1N5416/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
JAN1N5417

JAN1N5417

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

6,095 -
JAN1N5417

数据表

- B, Axial Bulk Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5806US

JAN1N5806US

DIODE GEN PURP 150V 2.5A D-5A

Microchip Technology

2,996 -
JAN1N5806US

数据表

- SQ-MELF, A Bulk Active Standard 150 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 2.5A Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
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