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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N5811

JAN1N5811

DIODE GEN PURP 150V 6A AXIAL

Microchip Technology

2,697 -
JAN1N5811

数据表

- B, Axial Bulk Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 6A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N3595A-1

JANTXV1N3595A-1

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

2,505 -
JANTXV1N3595A-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - 150mA Military MIL-PRF-19500/241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N3957/TR

JANTX1N3957/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,326 -
JANTX1N3957/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 1 V - 1A Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JAN1N6638U/TR

JAN1N6638U/TR

DIODE GEN PURP 150V 300MA D-5B

Microchip Technology

7,605 -
JAN1N6638U/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 150 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 150 V 2.5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JAN1N6638US/TR

JAN1N6638US/TR

DIODE GP 150V 300MA B SQ-MELF

Microchip Technology

6,677 -
JAN1N6638US/TR

数据表

- DO-213AB, MELF Tape & Reel (TR) Active Standard 150 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 150 V 2.5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N914UR-1

JANTX1N914UR-1

DIODE GEN PURP 75V 200MA DO213AA

Microchip Technology

8,568 -
JANTX1N914UR-1

数据表

- DO-213AA Bulk Active Standard 75 V 1.2 V @ 50 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 1.5V, 1MHz 200mA Military MIL-PRF-19500/116 Surface Mount DO-213AA -65°C ~ 175°C
1N3595UR-1/TR

1N3595UR-1/TR

DIODE GP 125V 150MA DO213AA

Microchip Technology

8,196 -
1N3595UR-1/TR

数据表

- DO-213AA Tape & Reel (TR) Active Standard 125 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - 150mA - - Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N5550/TR

JANTX1N5550/TR

DIODE GEN PURP 200V 5A

Microchip Technology

9,080 -
JANTX1N5550/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 200 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - 5A Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
CDLL5822/TR

CDLL5822/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

8,808 -
CDLL5822/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
CDLL5820/TR

CDLL5820/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

9,611 -
CDLL5820/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
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