富聪科技订单满¥1000免运费
关注我们:

单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UES1303

UES1303

DIODE GEN PURP 150V 6A AXIAL

Microchip Technology

100 -
UES1303

数据表

- B, Axial Bulk Active Standard 150 V 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V - 6A - - Through Hole B, Axial 175°C (Max)
CDLL1A50/TR

CDLL1A50/TR

DIODE SCHOTTKY 50V 1A DO213AB

Microchip Technology

6,642 -
CDLL1A50/TR

数据表

- DO-213AB, MELF Tape & Reel (TR) Active Schottky 50 V 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 50 V 0.9pF @ 5V, 1MHz 1A - - Surface Mount DO-213AB -
1N6642USE3

1N6642USE3

DIODE GP 75V 300MA B SQ-MELF

Microchip Technology

6,723 -
1N6642USE3

数据表

- SQ-MELF, B Bulk Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N6620

JAN1N6620

DIODE GEN PURP 220V 2A AXIAL

Microchip Technology

8,280 -
JAN1N6620

数据表

- A, Axial Bulk Active Standard 220 V 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz 2A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTX1N5804/TR

JANTX1N5804/TR

DIODE GEN PURP 100V 1A

Microchip Technology

8,945 -
JANTX1N5804/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N5711-1/TR

1N5711-1/TR

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

4,281 -
1N5711-1/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 70 V 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz 33mA - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
JANTX1N4248

JANTX1N4248

DIODE GEN PURP 800V 1A E3

Microchip Technology

5,575 -
JANTX1N4248

数据表

- E3 Bulk Active Standard 800 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - 1A Military MIL-PRF-19500/286 - E3 -65°C ~ 175°C
1N6642USE3/TR

1N6642USE3/TR

DIODE GP 75V 300MA B SQ-MELF

Microchip Technology

2,664 -
1N6642USE3/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N6638U

JANTX1N6638U

DIODE GEN PURP 125V 300MA D-5B

Microchip Technology

5,191 -
JANTX1N6638U

数据表

- SQ-MELF, E Bulk Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 125 V - 300mA Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JANTX1N6638US

JANTX1N6638US

DIODE GP 125V 300MA B SQ-MELF

Microchip Technology

6,963 -
JANTX1N6638US

数据表

- SQ-MELF, B Bulk Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns - - 300mA Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -65°C ~ 175°C
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户