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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4946/TRDIODE GEN PURP 600V 1A AXIAL Microchip Technology |
4,687 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | 25pF @ 12V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N4946-1/TRDIODE GEN PURP 600V 1A Microchip Technology |
6,815 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | 25pF @ 12V, 1MHz | 1A | - | - | Through Hole | - | -65°C ~ 175°C |
|
JANTX1N5621DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
2,016 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 800 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 800 V | 20pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N4249DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
3,634 | - |
|
数据表 |
- | A, Axial | Bulk | Obsolete | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1000 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5806US/TRDIODE GEN PURP 150V 1A D-5A Microchip Technology |
2,123 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 150 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
CD5804RECTIFIER UFR,FRR Microchip Technology |
2,578 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
JANTX1N5623USDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
34 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 1000 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
JANTX1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology |
66 | - |
|
数据表 |
- | DO-213AB, MELF (Glass) | Bag | Active | Schottky | 45 V | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | 1A | Military | MIL-PRF-19500/586 | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
JANS1N5806USDIODE GEN PURP 150V 1A D-5A Microchip Technology |
38 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
|
MSC050SDA120BCTDIODE SIC 1.2KV 109A TO247-3 Microchip Technology |
39 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 246pF @ 400V, 1MHz | 109A | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
