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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
MSC050SDA170B

MSC050SDA170B

DIODE SIC 1.7KV 136A TO247-2

Microchip Technology

48 -
MSC050SDA170B

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1700 V 4450pF @ 1V, 1MHz 136A - - Through Hole TO-247 -55°C ~ 175°C
JANTX1N5418/TR

JANTX1N5418/TR

DIODE GEN PURP 400V 3A

Microchip Technology

5,395 -
JANTX1N5418/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
CD5806

CD5806

RECTIFIER UFR,FRR

Microchip Technology

9,243 -
CD5806

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
JANTX1N4944

JANTX1N4944

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

4,464 -
JANTX1N4944

数据表

- A, Axial Bulk Active Standard 400 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 1A Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
1N5415

1N5415

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

3,290 -
1N5415

数据表

- B, Axial Bulk Active Standard 50 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N483B/TR

1N483B/TR

DIODE GEN PURP 70V 200MA DO35

Microchip Technology

5,112 -
1N483B/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 70 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 70 V - 200mA - - Through Hole DO-204AH (DO-35) -65°C ~ 200°C
1N3612/TR

1N3612/TR

DIODE GEN PURP 400V 1A

Microchip Technology

5,127 -
1N3612/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 400 V - 1A - - Through Hole A, Axial -65°C ~ 175°C
1N6638

1N6638

DIODE GP 125V 300MA D AXIAL

Microchip Technology

8,299 -
1N6638

数据表

- D, Axial Bulk Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 125 V 2pF @ 0V, 1MHz 300mA - - Through Hole D-5D -65°C ~ 200°C
JAN1N5804/TR

JAN1N5804/TR

DIODE GEN PURP 100V 2.5A

Microchip Technology

8,114 -
JAN1N5804/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 100 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 2.5A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5621/TR

JANTX1N5621/TR

DIODE GEN PURP 800V 1A

Microchip Technology

4,378 -
JANTX1N5621/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 800 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 800 V 20pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
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