订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UES1102E3/TRDIODE GEN PURP 100V 2.5A A AXIAL Microchip Technology |
8,161 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard | 100 V | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | 2.5A | - | - | Through Hole | A, Axial | 175°C |
|
1N6628USDIODE GEN PURP 660V 1.75A A-MELF Microchip Technology |
7,905 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 660 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
|
JANTXV1N5420/TRDIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
5,042 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N6628UDIODE GP 660V 1.75A SQ-MELF B Microchip Technology |
7,497 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 660 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
|
JANTXV1N5420DIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
4,357 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N6631USDIODE GEN PURP 1.1KV 1.4A A-MELF Microchip Technology |
5,297 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 1100 V | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | 1.4A | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
|
|
1N6642UB2DIODE GEN PURPOSE Microchip Technology |
3,414 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
JAN1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
5,269 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N5617DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
4,490 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N6631UDIODE GEN PURP 1KV 1.4A E-MELF Microchip Technology |
7,180 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 1000 V | 1.6 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1000 V | - | 1.4A | - | - | Surface Mount | E-MELF | -65°C ~ 150°C |
