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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6622U/TRDIODE GP 660V 1.2A A SQ-MELF Microchip Technology |
2,196 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 660 V | - | 1.2A | Military | MIL-PRF-19500/585 | Surface Mount | A, SQ-MELF | -65°C ~ 150°C |
|
|
UES1001DIODE GEN PURP 50V 1A A AXIAL Microchip Technology |
7,685 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 50 V | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | 1A | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
|
UES1102E3DIODE GEN PURP 100V 2.5A A AXIAL Microchip Technology |
5,835 | - |
|
数据表 |
- | Axial | Bulk | Active | Standard | 100 V | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | 2.5A | - | - | Through Hole | A, Axial | 175°C |
|
UES1101/TRDIODE GEN PURP 50V 2A A AXIAL Microchip Technology |
4,120 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | 2A | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
|
JANTXV1N5554USDIODE GEN PURP 1KV 3A D-5B Microchip Technology |
9,098 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
JANHCE1N5809DIODE GEN PURP 100V 3A DIE Microchip Technology |
7,128 | - |
|
数据表 |
- | Die | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 3A | - | - | Surface Mount | Die | -65°C ~ 175°C |
|
|
JANHCE1N5807DIODE GEN PURP 50V 3A DIE Microchip Technology |
6,348 | - |
|
数据表 |
- | Die | Bulk | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
|
|
JANHCE1N5811DIODE GEN PURP 150V 3A DIE Microchip Technology |
8,357 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
|
1N6663/TRDIODE GEN PURP 600V 600MA DO35 Microchip Technology |
8,210 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | 600mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
UES1001/TRDIODE GEN PURP 50V 1A A AXIAL Microchip Technology |
7,633 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | 1A | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
