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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N6628US/TR

1N6628US/TR

DIODE GEN PURP 600V 2.3A D-5B

Microchip Technology

7,660 -
1N6628US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 600 V 1.5 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 600 V 40pF @ 10V, 1MHz 2.3A - - Surface Mount D-5B -65°C ~ 150°C
1N6628U/TR

1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

Microchip Technology

6,757 -
1N6628U/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 660 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 660 V 40pF @ 10V, 1MHz 1.75A - - Surface Mount B, SQ-MELF -65°C ~ 150°C
1N6631US/TR

1N6631US/TR

DIODE GEN PURP 1.1KV 1.4A A-MELF

Microchip Technology

8,807 -
1N6631US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz 1.4A - - Surface Mount A-MELF -65°C ~ 150°C
1N6631U/TR

1N6631U/TR

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

5,767 -
1N6631U/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 1000 V 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - 1.4A - - Surface Mount E-MELF -65°C ~ 150°C
JANTX1N3646

JANTX1N3646

DIODE GP 1.75KV 250MA S AXIAL

Microchip Technology

8,411 -
JANTX1N3646

数据表

- S, Axial Bulk Active Standard 1750 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1750 V - 250mA Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JANTXV1N6620US

JANTXV1N6620US

DIODE GEN PURP 220V 1.2A D-5A

Microchip Technology

2,170 -
JANTXV1N6620US

数据表

- SQ-MELF, A Bulk Active Standard 220 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V - 1.2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JAN1N6076

JAN1N6076

DIODE GEN PURP 50V 1.3A E-PAK

Microchip Technology

8,709 -
JAN1N6076

数据表

- E, Axial Bulk Active Standard 50 V 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - 1.3A Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JAN1N6077

JAN1N6077

DIODE GEN PURP 100V 1.3A E-PAK

Microchip Technology

3,037 -
JAN1N6077

数据表

- E, Axial Bulk Active Standard 100 V 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - 1.3A Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JANTX1N5617

JANTX1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

7,740 -
JANTX1N5617

数据表

- A, Axial Bulk Active Standard 400 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTX1N4942

JANTX1N4942

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

6,776 -
JANTX1N4942

数据表

- A, Axial Bulk Active Standard 200 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 1A Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
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