| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6628US/TRDIODE GEN PURP 600V 2.3A D-5B Microchip Technology |
7,660 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 600 V | 1.5 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 600 V | 40pF @ 10V, 1MHz | 2.3A | - | - | Surface Mount | D-5B | -65°C ~ 150°C |
|
1N6628U/TRDIODE GP 660V 1.75A SQ-MELF Microchip Technology |
6,757 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 660 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
1N6631US/TRDIODE GEN PURP 1.1KV 1.4A A-MELF Microchip Technology |
8,807 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 1100 V | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | 1.4A | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
|
1N6631U/TRDIODE GEN PURP 1KV 1.4A E-MELF Microchip Technology |
5,767 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 1000 V | 1.6 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1000 V | - | 1.4A | - | - | Surface Mount | E-MELF | -65°C ~ 150°C |
|
JANTX1N3646DIODE GP 1.75KV 250MA S AXIAL Microchip Technology |
8,411 | - |
|
数据表 |
- | S, Axial | Bulk | Active | Standard | 1750 V | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1750 V | - | 250mA | Military | MIL-PRF-19500/279 | Through Hole | S, Axial | -65°C ~ 175°C |
|
JANTXV1N6620USDIODE GEN PURP 220V 1.2A D-5A Microchip Technology |
2,170 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 220 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 220 V | - | 1.2A | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
JAN1N6076DIODE GEN PURP 50V 1.3A E-PAK Microchip Technology |
8,709 | - |
|
数据表 |
- | E, Axial | Bulk | Active | Standard | 50 V | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | - | 1.3A | Military | MIL-PRF-19500/503 | Through Hole | E-PAK | -65°C ~ 155°C |
|
JAN1N6077DIODE GEN PURP 100V 1.3A E-PAK Microchip Technology |
3,037 | - |
|
数据表 |
- | E, Axial | Bulk | Active | Standard | 100 V | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | - | 1.3A | Military | MIL-PRF-19500/503 | Through Hole | E-PAK | -65°C ~ 155°C |
|
|
JANTX1N5617DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
7,740 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JANTX1N4942DIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
6,776 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 1A | Military | MIL-PRF-19500/359 | Through Hole | A, Axial | -65°C ~ 175°C |