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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N3612

JANTX1N3612

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

2 -
JANTX1N3612

数据表

- A, Axial Bulk Active Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 400 V - 1A Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JAN1N6628US

JAN1N6628US

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

2,873 -
JAN1N6628US

数据表

- SQ-MELF, E Bulk Active Standard 660 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTX1N5552

JANTX1N5552

DIODE GEN PURP 600V 5A AXIAL

Microchip Technology

8,662 -
JANTX1N5552

数据表

- B, Axial Bulk Active Standard 600 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - 5A Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N6630US

JAN1N6630US

DIODE GEN PURP 900V 1.4A D-5B

Microchip Technology

5,257 -
JAN1N6630US

数据表

- SQ-MELF, E Bulk Active Standard 900 V 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - 1.4A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6631US

JAN1N6631US

DIODE GEN PURP 1.1KV 1.4A D-5B

Microchip Technology

8,033 -
JAN1N6631US

数据表

- SQ-MELF, E Bulk Active Standard 1100 V 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz 1.4A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6620US/TR

JANTXV1N6620US/TR

DIODE GEN PURP 220V 1.2A D-5A

Microchip Technology

6,682 -
JANTXV1N6620US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 220 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V - 1.2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTXV1N6620U/TR

JANTXV1N6620U/TR

DIODE GP 220V 1.2A A SQ-MELF

Microchip Technology

7,311 -
JANTXV1N6620U/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 220 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 220 V - 1.2A Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 150°C
1N6073US/TR

1N6073US/TR

UFR,FRR

Microchip Technology

6,509 -
1N6073US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 50 V - 850mA - - Surface Mount A, SQ-MELF -65°C ~ 155°C
JANS1N6642U

JANS1N6642U

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

5,544 -
JANS1N6642U

数据表

- SQ-MELF, D Tray Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JANS1N6642US

JANS1N6642US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

7,877 -
JANS1N6642US

数据表

- D, SQ-MELF Bulk Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
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