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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTXV1N6622US

JANTXV1N6622US

DIODE GEN PURP 660V 1.2A D-5A

Microchip Technology

8,961 -
JANTXV1N6622US

数据表

- SQ-MELF, A Bulk Discontinued at Digi-Key Standard 660 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V - 1.2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
1N6541

1N6541

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

9,986 -
1N6541

数据表

* - Bulk Active - - - - - - - - - - - - -
UES1101

UES1101

DIODE GEN PURP 50V 2A A AXIAL

Microchip Technology

9,273 -
UES1101

数据表

- A, Axial Bulk Active Standard 50 V 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - 2A - - Through Hole A, Axial -55°C ~ 175°C
JANTXV1N6074/TR

JANTXV1N6074/TR

DIODE GP 100V 850MA A AXIAL

Microchip Technology

5,228 -
JANTXV1N6074/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 100 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - 850mA Military MIL-PRF-19500/503 Through Hole A, Axial -65°C ~ 155°C
JANTXV1N6075/TR

JANTXV1N6075/TR

DIODE GEN PURP 150V 850MA A-PAK

Microchip Technology

4,320 -
JANTXV1N6075/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 150 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - 850mA Military MIL-PRF-19500/503 Through Hole A, Axial -65°C ~ 155°C
1N6663

1N6663

RECTIFIER DIODE

Microchip Technology

3,916 -
1N6663

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 600 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 600 V - 500mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTXV1N6624US/TR

JANTXV1N6624US/TR

DIODE GEN PURP 900V 1A D-5A

Microchip Technology

9,363 -
JANTXV1N6624US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 900 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 150 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTXV1N6624U/TR

JANTXV1N6624U/TR

DIODE GP 990V 1A A SQ-MELF

Microchip Technology

6,949 -
JANTXV1N6624U/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 990 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 990 V - 1A Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 150°C
JAN1N3647

JAN1N3647

DIODE GP 3KV 250MA S AXIAL

Microchip Technology

4,656 -
JAN1N3647

数据表

- S, Axial Bulk Discontinued at Digi-Key Standard 3000 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1500 V - 250mA Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 150°C
JANTXV1N6622US/TR

JANTXV1N6622US/TR

DIODE GEN PURP 660V 1.2A D-5A

Microchip Technology

8,433 -
JANTXV1N6622US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 660 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V - 1.2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
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