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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N5622DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
4,981 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1000 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
1N5619USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
4,921 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
1N5811DIODE GEN PURP 150V 3A B AXIAL Microchip Technology |
9 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5806USDIODE GEN PURP 150V 1A D-5A Microchip Technology |
7,663 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
1N5811US/TRDIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
2 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
MSC030SDA070SDIODE SIL CARBIDE 700V 60A D3PAK Microchip Technology |
24 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | - | 60A | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
|
JANTX1N5420DIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
5,551 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTXV1N5806USDIODE GEN PURP 150V 1A D-5A Microchip Technology |
18 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
JAN1N6630US/TRUFR,FRR Microchip Technology |
4,754 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 900 V | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 2 µA @ 900 V | 40pF @ 10V, 1MHz | 1.4A | Military | MIL-PRF-19500 | Surface Mount | E-MELF | -65°C ~ 150°C |
|
JAN1N6631US/TRDIODE GEN PURP 1.1KV 1.4A D-5B Microchip Technology |
6,141 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 1100 V | 1.6 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | 1.4A | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
