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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N6624/TR

JAN1N6624/TR

DIODE GEN PURP 900V 1A

Microchip Technology

5,596 -
JAN1N6624/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 900 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 900 V - 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JAN1N6626/TR

JAN1N6626/TR

DIODE GEN PURP 220V 1.75A

Microchip Technology

3,068 -
JAN1N6626/TR

数据表

- E, Axial Tape & Reel (TR) Active Standard 220 V 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 220 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JAN1N6625/TR

JAN1N6625/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

4,554 -
JAN1N6625/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 1 V - 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JAN1N6627/TR

JAN1N6627/TR

DIODE GEN PURP 440V 1.75A

Microchip Technology

3,564 -
JAN1N6627/TR

数据表

- E, Axial Tape & Reel (TR) Active Standard 440 V 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTX1N3645/TR

JANTX1N3645/TR

DIODE GP REV 1.4KV 250MA S AXIAL

Microchip Technology

5,702 -
JANTX1N3645/TR

数据表

- S, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 1400 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1400 V - 250mA Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JAN1N5190/TR

JAN1N5190/TR

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

3,835 -
JAN1N5190/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 2 µA @ 600 V - 3A Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5418US/TR

JANTX1N5418US/TR

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

2,840 -
JANTX1N5418US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 400 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTX1N5416US

JANTX1N5416US

DIODE GEN PURP 100V 3A D-5B

Microchip Technology

9,460 -
JANTX1N5416US

数据表

- SQ-MELF, E Bulk Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N6543

1N6543

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

8,181 -
1N6543

数据表

- - Bulk Active - - - - - - - - - - - - -
JANTXV1N6642

JANTXV1N6642

DIODE GEN PURP 100V 300MA

Microchip Technology

2,969 -
JANTXV1N6642

数据表

- Axial Bulk Active Standard 100 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 100 V - 300mA Military MIL-PRF-19500/578 Through Hole - -65°C ~ 175°C
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