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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N6626

JAN1N6626

DIODE GEN PURP 220V 1.75A AXIAL

Microchip Technology

7,885 -
JAN1N6626

数据表

- E, Axial Bulk Active Standard 220 V 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 220 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JAN1N6627

JAN1N6627

DIODE GEN PURP 440V 1.75A AXIAL

Microchip Technology

9,291 -
JAN1N6627

数据表

- E, Axial Bulk Active Standard 440 V 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JAN1N6623

JAN1N6623

DIODE GEN PURP 800V 1A A-PAK

Microchip Technology

4,799 -
JAN1N6623

数据表

- A, Axial Bulk Active Standard 800 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 800 V - 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JAN1N6624

JAN1N6624

DIODE GEN PURP 900V 1A AXIAL

Microchip Technology

2,122 -
JAN1N6624

数据表

- A, Axial Bulk Active Standard 900 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 900 V - 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JAN1N6625

JAN1N6625

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

2,214 -
JAN1N6625

数据表

- A, Axial Bulk Active Standard 1000 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 1000 V - 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
1N5712UB/TR

1N5712UB/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

100 -
1N5712UB/TR

数据表

- 4-SMD, No Lead Tape & Reel (TR) Active Schottky 16 V 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz 75mA - - Surface Mount UB -65°C ~ 150°C
1N4148UB2R/TR

1N4148UB2R/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

100 -
1N4148UB2R/TR

数据表

- 2-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA - - Surface Mount UB2 -65°C ~ 200°C
1N6642UB2R/TR

1N6642UB2R/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

100 -
1N6642UB2R/TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
JANTX1N3645

JANTX1N3645

DIODE GP 2KV 250MA S AXIAL

Microchip Technology

4,878 -
JANTX1N3645

数据表

- S, Axial Bulk Active Standard 2000 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 2000 V - 250mA Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JAN1N5190

JAN1N5190

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

6,279 -
JAN1N5190

数据表

- B, Axial Bulk Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 2 µA @ 600 V - 3A Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
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