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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N5417US/TRDIODE GEN PURP 200V 3A D-5B Microchip Technology |
3,482 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTXV1N6643US/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
5,135 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 50 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 50 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
1N4305-1E3DIODE GEN PURP 50V 200MA DO35 Microchip Technology |
8,749 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 50 V | 850 mV @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 2 ns | 100 nA @ 50 V | - | 200mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
|
1N4257/TRDIODE GP 3KV 250MA S AXIAL Microchip Technology |
2,053 | - |
|
数据表 |
- | S, Axial | Tape & Reel (TR) | Active | Standard | 3000 V | 3.5 V @ 100 mA | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 3000 V | - | 250mA | - | - | Through Hole | S, Axial | -65°C ~ 175°C |
|
|
JANTXV1N5554DIODE GEN PURP 1KV 5A AXIAL Microchip Technology |
6,019 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 1000 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | 5A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5802/TRDIODE GEN PURP 50V 1A Microchip Technology |
5,935 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N6630DIODE GEN PURP 990V 1.4A AXIAL Microchip Technology |
9,621 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 990 V | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 2 µA @ 990 V | 40pF @ 10V, 1MHz | 1.4A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JAN1N6623/TRDIODE GEN PURP 800V 1A A-PAK Microchip Technology |
4,301 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 800 V | - | 1A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JAN1N6621/TRDIODE GEN PURP 440V 2A Microchip Technology |
6,641 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 440 V | 1.6 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JAN1N6622/TRDIODE GEN PURP 660V 2A Microchip Technology |
2,304 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 660 V | 1.6 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
