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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5711UR-1E3/TRDIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology |
6,760 | - |
|
数据表 |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 50 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
|
UT4020/TRDIODE GEN PURP 200V 4A B Microchip Technology |
4,966 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | 4A | - | - | Through Hole | B | -195°C ~ 175°C |
|
|
JANTX1N6641US/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
2,550 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 50 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 nA @ 50 V | - | 300mA | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
1N6626/TRDIODE GEN PURP 220V 1.75A Microchip Technology |
3,851 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 220 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
1N6627/TRDIODE GEN PURP 440V 1.75A Microchip Technology |
9,608 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 440 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
1N5553US/TRSTD RECTIFIER Microchip Technology |
2,487 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 800 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
1N5420US/TRDIODE GEN PURP 600V 3A D-5B Microchip Technology |
5,609 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
1N5419US/TRDIODE GEN PURP 500V 3A D-5B Microchip Technology |
2,586 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
1N5416US/TRDIODE GEN PURP 100V 3A D-5B Microchip Technology |
2,103 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTXV1N5419/TRDIODE GEN PURP 500V 3A Microchip Technology |
8,758 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 500 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
