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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N6544/TR

1N6544/TR

RECTIFIER UFR,FRR

Microchip Technology

8,409 -
1N6544/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
JANTX1N6620/TR

JANTX1N6620/TR

DIODE GEN PURP 220V 2A AXIAL

Microchip Technology

5,824 -
JANTX1N6620/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 220 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz 2A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
1N6625

1N6625

DIODE GEN PURP 1.1KV 1A AXIAL

Microchip Technology

4,716 -
1N6625

数据表

- A, Axial Bulk Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V 10pF @ 10V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 150°C
JANTXV1N5615/TR

JANTXV1N5615/TR

DIODE GEN PURP 200V 1A

Microchip Technology

6,443 -
JANTXV1N5615/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 200 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
1N6626US/TR

1N6626US/TR

DIODE GEN PURP 220V 1.75A A-MELF

Microchip Technology

2,427 -
1N6626US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 220 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 220 V 40pF @ 10V, 1MHz 1.75A - - Surface Mount A-MELF -65°C ~ 150°C
1N6625/TR

1N6625/TR

DIODE GEN PURP 1.1KV 1A

Microchip Technology

2,280 -
1N6625/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V 10pF @ 10V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 150°C
1N6624/TR

1N6624/TR

DIODE GEN PURP 990V 1A A-PAK

Microchip Technology

2,120 -
1N6624/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 990 V 1.55 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 900 V 10pF @ 10V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 150°C
1N6626UE3

1N6626UE3

DIODE GP 200V 1.75A E AXIAL

Microchip Technology

9,762 -
1N6626UE3

数据表

- E, Axial Bulk Active Standard 200 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 200 V - 1.75A - - Through Hole E, Axial -65°C ~ 150°C
1N6626U/TR

1N6626U/TR

DIODE GP 220V 1.75A SQ-MELF

Microchip Technology

8,450 -
1N6626U/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 220 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 220 V 40pF @ 10V, 1MHz 1.75A - - Surface Mount B, SQ-MELF -65°C ~ 150°C
1N459A

1N459A

DIODE GEN PURP 200V 150MA DO35

Microchip Technology

2,966 -
1N459A

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 200 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 200 V - 150mA - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
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