订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4257RECTIFIER DIODE Microchip Technology |
3,920 | - |
|
数据表 |
- | S, Axial | Bulk | Active | Standard | 3000 V | 3.5 V @ 100 mA | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 3000 V | - | 250mA | - | - | Through Hole | S, Axial | -65°C ~ 175°C |
|
1N4305DIODE GEN PURP 75V 200MA DO7 Microchip Technology |
3,611 | - |
|
数据表 |
- | DO-204AA, DO-7, Axial | Bulk | Active | Standard | 75 V | 850 mV @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 2 ns | 100 nA @ 50 V | - | 200mA | - | - | Through Hole | DO-7 | -65°C ~ 150°C |
|
|
JANTXV1N5419DIODE GEN PURP 500V 3A AXIAL Microchip Technology |
8,654 | - |
|
数据表 |
- | B, Axial | Bulk | Discontinued at Digi-Key | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 500 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N5711UR-1E3DIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology |
4,380 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Schottky | 50 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
JANTX1N4946/TRDIODE GEN PURP 600V 1A Microchip Technology |
9,936 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | - | 1A | Military | MIL-PRF-19500/359 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N6627DIODE GEN PURP 440V 1.75A AXIAL Microchip Technology |
6,870 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 440 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JAN1N6622DIODE GEN PURP 660V 2A AXIAL Microchip Technology |
9,656 | - |
|
数据表 |
- | A, Axial | Bulk | Discontinued at Digi-Key | Standard | 660 V | 1.6 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JANTXV1N5802DIODE GEN PURP 50V 1A AXIAL Microchip Technology |
9,669 | - |
|
数据表 |
- | A, Axial | Bulk | Discontinued at Digi-Key | Standard | 50 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JAN1N6621DIODE GEN PURP 440V 2A AXIAL Microchip Technology |
9,378 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 440 V | 1.6 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
UES1103SMDIODE GEN PURP 150V 2.5A A-MELF Microchip Technology |
94 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 150 V | - | 2.5A | - | - | Surface Mount | A-MELF | 175°C (Max) |
