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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6626USDIODE GEN PURP 220V 1.75A A-MELF Microchip Technology |
7,074 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 220 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
|
1N6626UDIODE GP 220V 1.75A SQ-MELF B Microchip Technology |
7,410 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 220 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
1N6631/TRDIODE GEN PURP 1.1KV 1.4A Microchip Technology |
9,490 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1100 V | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | 1.4A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
1N6631E3DIODE GP 1.1KV 1.4A E AXIAL Microchip Technology |
3,869 | - |
|
数据表 |
- | E, Axial | Bulk | Active | Standard | 1100 V | 1.6 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | 1.4A | - | - | Through Hole | E, Axial | -65°C ~ 150°C |
|
JANTX1N6620DIODE GEN PURP 220V 2A AXIAL Microchip Technology |
2,767 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 220 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 220 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
UTR2350DIODE GEN PURP 500V 2A B AXIAL Microchip Technology |
5,211 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 500 V | 1.1 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 350 ns | 5 µA @ 500 V | 200pF @ 0V, 1MHz | 2A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
UTR2320DIODE GEN PURP 200V 2A B AXIAL Microchip Technology |
7,754 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 200 V | 1.1 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 200 V | 320pF @ 0V, 1MHz | 2A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
UTR2360DIODE GEN PURP 600V 2A B AXIAL Microchip Technology |
5,139 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.1 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 5 µA @ 600 V | 160pF @ 0V, 1MHz | 2A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
UTR2310DIODE GEN PURP 100V 2A B AXIAL Microchip Technology |
8,431 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 100 V | 1.1 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 100 V | 400pF @ 0V, 1MHz | 2A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
UTR2305DIODE GEN PURP 50V 2A B AXIAL Microchip Technology |
8,740 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 50 V | 1.1 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 50 V | 600pF @ 0V, 1MHz | 2A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
