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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6626DIODE GEN PURP 220V 1.75A AXIAL Microchip Technology |
7,595 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 220 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
JANTX1N6641USDIODE GEN PURP 50V 300MA D-5B Microchip Technology |
9,973 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 50 V | 1.1 V @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 µA @ 50 V | - | 300mA | Military | MIL-PRF-19500/609 | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
1N5420USDIODE GEN PURP 600V 3A D-5B Microchip Technology |
9,080 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTXV1N5615US/TRDIODE GEN PURP 200V 1A D-5A Microchip Technology |
5,482 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 200 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 600 V | 45pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JAN1N5416US/TRDIODE GEN PURP 100V 3A Microchip Technology |
6,170 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JAN1N5420US/TRDIODE GEN PURP 600V 3A D-5B Microchip Technology |
4,403 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
JANTX1N4946DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
9,508 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | - | 1A | Military | MIL-PRF-19500/359 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N4305-1DIODE SWITCHING Microchip Technology |
8,331 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
1N4255RECTIFIER DIODE Microchip Technology |
3,131 | - |
|
数据表 |
- | S, Axial | Bulk | Active | Standard | 2000 V | 3.5 V @ 100 mA | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 2000 V | - | 250mA | - | - | Through Hole | S, Axial | -65°C ~ 175°C |
|
|
1N4256RECTIFIER DIODE Microchip Technology |
4,662 | - |
|
数据表 |
- | S, Axial | Bulk | Active | Standard | 2500 V | 3.5 V @ 100 mA | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 2500 V | - | 250mA | - | - | Through Hole | S, Axial | -65°C ~ 175°C |
