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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4946US/TR

1N4946US/TR

UFR,FRR

Microchip Technology

98 -
1N4946US/TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
1N5820USE3/TR

1N5820USE3/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

135 -
1N5820USE3/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Schottky 20 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - 3A - - Surface Mount B, SQ-MELF -65°C ~ 125°C
1N6642UB2/TR

1N6642UB2/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

100 -
1N6642UB2/TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
1N5811A/TR

1N5811A/TR

DIODE GP REV 150V 3A B AXIAL

Microchip Technology

7,893 -
1N5811A/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5615US

JANTXV1N5615US

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

7,091 -
JANTXV1N5615US

数据表

- SQ-MELF, A Bulk Active Standard 200 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 600 V 45pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
1N6662/TR

1N6662/TR

DIODE GEN PURP 400V 500MA DO35

Microchip Technology

8,993 -
1N6662/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 400 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - 500mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5711UR-1/TR

1N5711UR-1/TR

DIODE SCHOTTKY 50V 33MA DO213AA

Microchip Technology

5,693 -
1N5711UR-1/TR

数据表

- DO-213AA Tape & Reel (TR) Active Schottky 50 V 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz 33mA - - Surface Mount DO-213AA -65°C ~ 150°C
UT4020

UT4020

DIODE GEN PURP 200V 4A B

Microchip Technology

7,488 -
UT4020

数据表

- Axial Bulk Active Standard 200 V 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V - 4A - - Through Hole B -195°C ~ 175°C
JANTXV1N5622/TR

JANTXV1N5622/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

2,359 -
JANTXV1N5622/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1 V - 1A Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N6471E3

1N6471E3

DIODE GEN PURP 400V 400MA DO35

Microchip Technology

3,335 -
1N6471E3

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 400 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 200 nA @ 400 V - 400mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
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